si4410bdy Vishay, si4410bdy Datasheet
si4410bdy
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si4410bdy Summary of contents
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... Top View Ordering Information: Si4410BDY Si4410BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si4410BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... SD Document Number: 72211 S-31990—Rev. B, 13-Oct-03 2000 1600 1200 800 GS 400 40 50 2.0 1.6 1.2 0.8 0.4 0 0.10 0.08 0.06 0. 25_C J 0.02 0.00 0.8 1.0 1.2 Si4410BDY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature -50 - 100 T - Junction Temperature (_C) J On-Resistance vs ...
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... Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 - Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 Safe Operating Area, Junction-to-Case ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72211 S-31990—Rev. B, 13-Oct- Square Wave Pulse Duration (sec) Si4410BDY Vishay Siliconix 1 10 www.vishay.com 5 ...