si4410bdy Vishay, si4410bdy Datasheet - Page 2

• Manufacturer Part Number: si4410bdy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4410BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
V
a
- Drain-to-Source Voltage (V)
GS
= 10 thru 5 V
1.5
a
a
J
2 V
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
3 V
V
r
r
3.0
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
Q
g
R
t
t
SD
t
rr
fs
gs
gd
gt
r
f
g
g
4 V
3.5
4.0
V
V
V
I
D
DS
DS
DS
DS
^ 1 A, V
I
F
= 15 V, V
V
= 30 V, V
V
= 15 V, V
V
V
V
V
V
V
DS
= 2.3 A, di/dt = 100 A/ms
V
I
DS
DS
Test Condition
S
DS
GS
DD
DD
DS
GS
= 2.3 A, V
= 0 V, V
= V
w 5 V, V
= 30 V, V
= 10 V, I
= 25 V, R
= 25 V, R
= 15 V, I
= 4.5 V, I
GEN
f = 1 MHz
GS
GS
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V, I
D
= 5 V, I
GS
D
GS
GS
= 250 mA
D
L
L
D
= "20 V
= 10 A
= 25 W
= 25 W
= 10 A
= 10 V
= 5 A
= 0 V
= 0 V
J
D
D
D
G
= 55_C
= 10 A
50
40
30
20
10
= 10 A
= 6 W
0
0
V
1
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
1.0
0.5
20
T
C
2
= 125_C
25_C
0.0165
0.011
Typ
0.76
5.5
3.7
1.6
25
13
25
10
10
40
15
35
S-31990—Rev. B, 13-Oct-03
Document Number: 72211
3
0.0135
"100
Max
0.020
3.0
1.1
2.7
20
40
15
15
60
25
70
1
5
-55_C
4
Unit
nA
mA
mA
nC
nC
ns
W
W
W
V
A
S
V
5