si4410bdy Vishay, si4410bdy Datasheet - Page 3

• Manufacturer Part Number: si4410bdy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72211
S-31990—Rev. B, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
8
6
4
2
0
50
10
1
0.00
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 10 A
GS
0.2
10
= 15 V
5
V
Q
= 4.5 V
SD
T
g
J
= 150_C
- Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
I
D
0.4
- Drain Current (A)
Gate Charge
20
10
0.6
30
15
0.8
V
GS
T
40
20
J
= 10 V
= 25_C
1.0
50
25
1.2
0.10
0.08
0.06
0.04
0.02
0.00
2000
1600
1200
800
400
2.0
1.6
1.2
0.8
0.4
0.0
0
0
-50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
-25
V
I
D
rss
GS
= 10 A
V
2
V
GS
6
= 10 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
C
Capacitance
25
4
oss
12
I
Vishay Siliconix
D
C
= 10 A
50
iss
Si4410BDY
6
18
75
100
www.vishay.com
8
24
125
10
150
30
3