si4426dy Vishay, si4426dy Datasheet

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si4426dy

Manufacturer Part Number
si4426dy
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 71107
S-01041—Rev. B, 15-May-00
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
20
20
(V)
G
S
S
S
1
2
3
4
Top View
SO-8
J
J
a
a
0.025 @ V
0.035 @ V
= 150_C)
= 150_C)
a
a
Parameter
Parameter
r
DS(on)
8
7
6
5
a
a
GS
GS
(W)
N-Channel 20-V (D-S) MOSFET
= 4.5 V
= 2.5 V
D
D
D
D
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
"8.5
"7.1
(A)
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
I
I
DM
thJA
thJA
thJF
I
DS
GS
D
D
S
D
D
stg
D
S
10 secs
Typical
"8.5
"6.8
2.1
2.5
1.6
38
70
20
–55 to 150
"12
"40
20
www.vishay.com S FaxBack 408-970-5600
Steady State
Maximum
Vishay Siliconix
"6.5
"5.2
2.1
1.5
0.9
50
85
25
Si4426DY
Unit
_C/W
Unit
C/W
_C
W
W
V
V
A
A
A
2-1

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si4426dy Summary of contents

Page 1

... 70_C 1 stg Symbol Typical sec thJA thJA Steady State 70 Steady State R 20 thJF Si4426DY Vishay Siliconix Steady State Unit "12 "6.5 "5 "40 2.1 1 0.9 –55 to 150 _C Maximum Unit 50 85 _C/W C/W 25 www.vishay.com S FaxBack 408-970-5600 ...

Page 2

... Si4426DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... 1.4 1.3 1.2 1.1 1.0 0.9 0 –50 0.10 0.08 0.06 = 25_C 0.04 0.02 0 1.0 1.2 1.4 0 Si4426DY Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature – 100 125 T – Junction Temperature (_C) J On-Resistance vs. Gate-to-Source Voltage ...

Page 4

... Si4426DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...

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