si4426dy Vishay, si4426dy Datasheet - Page 2

• Manufacturer Part Number: si4426dy
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si4426DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com S FaxBack 408-970-5600
2-2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
30
20
10
0
0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
a
– Drain-to-Source Voltage (V)
V
GS
1.5
= 5 thru 3 V
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
3.0
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
1, 1.5 V
2.5 V
3.5
2 V
4.0
New Product
V
V
V
I
I
DS
D
DS
^ 1 A, V
I
= 10 V, V
F
V
= 20 V, V
V
V
V
V
V
V
10 V V
V
V
1 A V
DS
= 2.1 A, di/dt = 100 A/ms
DS
I
GS
DS
Test Condition
GS
S
DS
DS
DD
DD
= 2.1 A, V
= 0 V, V
w 5 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= 20 V, V
= 10 V, R
GEN
10 V R
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
,
GS
= 0 V, T
D
GS
10 V R
D
4 5 V I
GS
D
GS
= 250 mA
D
L
L
= "12 V
= 8.5 A
= 7.1 A
= 10 W
= 4.5 V
= 8.5 A
= 0 V
= 0 V
10
40
30
20
10
0
J
D
G
= 55_C
0
= 8.5 A
= 6 W
8 5 A
6
0.5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
1.0
25_C
Min
T
0.6
40
C
= 125_C
1.5
0.019
0.025
Typ
0.8
6.5
27
25
40
40
90
40
40
S-01041—Rev. B, 15-May-00
4
2.0
Document Number: 71107
–55_C
"100
Max
0.025
0.035
150
1.2
50
60
60
60
60
1
5
2.5
Unit
3.0
nA
mA
mA
nC
ns
W
W
V
A
S
V
C