si4426dy Vishay, si4426dy Datasheet - Page 3

• Manufacturer Part Number: si4426dy
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71107
S-01041—Rev. B, 15-May-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
40
10
0
5
4
3
2
1
0
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 8.5 A
0.2
On-Resistance vs. Drain Current
= 10 V
5
V
10
SD
Q
0.4
g
T
– Source-to-Drain Voltage (V)
I
J
D
– Total Gate Charge (nC)
V
= 150_C
GS
– Drain Current (A)
Gate Charge
10
= 2.5 V
0.6
20
0.8
15
T
J
V
= 25_C
1.0
GS
30
= 4.5 V
20
1.2
40
1.4
25
New Product
4000
3200
2400
1600
0.10
0.08
0.06
0.04
0.02
800
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
D
–25
GS
= 8.5 A
= 4.5 V
V
1
4
DS
T
V
0
J
GS
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
C
C
– Gate-to-Source Voltage (V)
iss
oss
www.vishay.com S FaxBack 408-970-5600
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 8.5 A
12
3
75
Si4426DY
100
16
4
125
150
20
5
2-3