2sk1580 Renesas Electronics Corporation., 2sk1580 Datasheet

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2sk1580

Manufacturer Part Number
2sk1580
Description
Mos Field Effect Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SK1580.pdf (5 pages)

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Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
• Possible to reduce the number of parts by omitting the bias
ORDERING INFORMATION
Marking: G13
ABSOLUTE MAXIMUM RATINGS (T
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
can be driven by 2.5 V power supply.
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Drain to Source Voltage (V
The 2SK1580 is an N -channel vertical type MOS FET which
input impedance.
resistor.
As the 2SK1580 is driven by low voltage and does not require
PART NUMBER
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK1580
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
C
= 25°C)
DS
A
GS
= 25°C)
= 0 V)
= 0 V)
SC-70 (SSP)
PACKAGE
The mark
N-CHANNEL MOS FET
A
= 25°C)
I
DATA SHEET
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
stg
ch
SWITCHING
T
shows major revised points.
−55 to +150
MOS FIELD EFFECT TRANSISTOR
±100
±200
±16
150
150
16
mW
mA
mA
°C
°C
V
V
PACKAGE DRAWING (Unit: mm)
2
1
1.25±0.1
2.1±0.1
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
2SK1580
Marking
3
Source
Drain
1. Source
2. Gate
3. Drain
Body
Diode
1991

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2sk1580 Summary of contents

Page 1

... DESCRIPTION The 2SK1580 -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current suitable for appliance including VCR cameras and headphone stereos which need power saving. ...

Page 2

... R d(off 90 10 10% 10 d(on) r d(off off Data Sheet D13555EJ5V0DS 2SK1580 MIN. TYP. MAX. UNIT µ 1.0 A µ ±5.0 A 0.8 1.1 1 Ω 9.0 15 6.0 10 Ω 4 ...

Page 3

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 1000 V Data Sheet D13555EJ5V0DS 2SK1580 DRAIN CURRENT VS. DRAIN TO SOURCE VOLTAGE 3.5 V Pulsed 3 Drain to Source Voltage - ...

Page 4

... SWITCHING CHARACTERISTICS 1000 Ω 300 C iss C oss 100 C rss 100 2 Data Sheet D13555EJ5V0DS 2SK1580 Pulsed 120 150 T - Channel Temperature - ˚ d(off) t d(on ...

Page 5

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK1580 Not all M8E 02. 11-1 ...

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