2sk2857 Renesas Electronics Corporation., 2sk2857 Datasheet

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2sk2857

Manufacturer Part Number
2sk2857
Description
N-channel Mos Field Effect Transistor For High Speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SK2857.pdf (8 pages)

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Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
by a 5V power source.
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes1. PW
The 2SK2857 is a switching device which can be driven directly
The 2SK2857 features a low on-state resistance and excellent
Can be driven by a 5V power source.
Low On-state resistance :
R
R
DS(on)1
DS(on)2
2. Mounted on ceramic board of 16 cm
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 220 m MAX. (V
= 150 m
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
Note1
MAX. (V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note2
GS
GS
= 4 V, I
= 10 V, I
1 %
FOR HIGH SPEED SWITCHING
I
D
D(pulse)
I
V
V
The mark • • • • shows major revised points.
A
D(DC)
T
T
D
P
= 1.5 A)
DSS
GSS
stg
ch
= 25 °C)
T
= 2.5 A)
2
DATA SHEET
0.7 mm
55 to +150
±20
±16
150
60
±4
2
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit : mm)
0.42
±0.06
1
4.5±0.1
1.6±0.2
1.5
3.0
Gate
Gate
Protection
Diode
2
EQUIVALENT CIRCUIT
0.47
±0.06
3
0.42
±0.06
©
2SK2857
Source
Drain
0.41
1.5±0.1
+0.03
-0.05
Marking : NX
Internal
Diode
Electrode
Connection
1998,1999
1.Souce
2.Drain
3.Gate

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2sk2857 Summary of contents

Page 1

... N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2857 is a switching device which can be driven directly power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES Can be driven power source. ...

Page 2

... Q rr TEST CIRCUIT 2 GATE CHARGE GS(on PG d(on) r d(off off Data Sheet D11648EJ2V0DS00 2SK2857 MIN. TYP. MAX. UNIT 10 A ±10 A 1.0 1.4 2 150 220 m 110 150 m 265 pF 125 ...

Page 3

... 0.1 0.01 1.6 2.0 1 240 200 160 120 0 Data Sheet D11648EJ2V0DS00 2SK2857 100 V - Drain to Source Voltage - V DS TRANSFER CHARACTERISTICS Gate to Sorce Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT T = 125 ˚ ˚C 25 ˚C 25 ˚ ...

Page 4

... SWITCHING CHARACTERISTICS 1000 C iss 100 C oss 10 C rss 0.1 100 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1.8 2.0 Data Sheet D11648EJ2V0DS00 2SK2857 Gate to Source Voltage - (off (on Drain Current - ...

Page 5

... Data Sheet D11648EJ2V0DS00 2SK2857 5 ...

Page 6

... Data Sheet D11648EJ2V0DS00 2SK2857 ...

Page 7

... Data Sheet D11648EJ2V0DS00 2SK2857 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. 2SK2857 M7 98. 8 ...

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