2sk2167 Sanyo Semiconductor Corporation, 2sk2167 Datasheet
2sk2167
Manufacturer Part Number
2sk2167
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SK2167.pdf
(4 pages)
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Ordering number : EN4631A
2SK2167
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KK
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
V SD
Tstg
I DP
P D
Tch
yfs
I D
t r
t f
SANYO Semiconductors
81006PA MS IM TC-00000124 / 71599 TH (KT) / 51794 TH (KOTO) BX-0113
PW 10 s, duty cycle 1%
Tc=25 C
Mounted on a ceramic board (600mm
I D =1mA, V GS =0V
V DS =250V, V GS =0V
V GS = 18V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =200mA
I D =200mA, V GS =10V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
I S =400mA, V GS =0V
2SK2167
Conditions
Conditions
2
0.8mm)
DATA SHEET
min
250
270
1.5
Ratings
typ
Ratings
400
1.0
37
10
10
10
35
45
8
4
--55 to +150
max
250
400
150
1.6
3.5
1.3
100
2.5
20
10
12
No.4631-1/4
Unit
Unit
mA
mS
pF
pF
pF
ns
ns
ns
ns
W
W
V
V
A
V
V
V
C
C
A
A
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2sk2167 Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK2167 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
Page 2
... ITR02529 ITR02531 V DD =100V =200mA =500 PW= OUT D. 2SK2167 Gate-to-Source Voltage (on --60 --40 -- Case Temperature ...
Page 3
... Drain-to-Source Voltage 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Amibient Tamperature 2SK2167 =10V 2 100 1000 2 3 ITR02533 2 f=1MHz I DP =1.6A 1 =0.4A 5 Ciss Operation in this area 3 is limited (on). ...
Page 4
... Note on usage : Since the 2SK2167 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...