2sk2795 Renesas Electronics Corporation., 2sk2795 Datasheet

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2sk2795

Manufacturer Part Number
2sk2795
Description
Silicon N Channel Mos Fet Uhf Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2795
Manufacturer:
HITACHI/日立
Quantity:
20 000
Features
• High power output, High gain, High effeciency
Outline
An Adequate handling procedure is requested.
This Device is sensitive to Electro Static Discharge.
PG = 11dB, Pout = 24dBm, D = 40 %min. (f = 836.5MHz)
Compact package capable of surface mounting
UPAK
Silicon N Channel MOS FET
UHF Power Amplifier
3
2SK2795
2
1
4
1. Gate
2. Source
3. Drain
4. Source
ADE-208-466 A (Z)
November. 1996
2nd. Edition

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2sk2795 Summary of contents

Page 1

... Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm %min 836.5MHz) • Compact package capable of surface mounting Outline UPAK This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2795 Gate 2. Source 3. Drain 4. Source ADE-208-466 A (Z) 2nd ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note 10ms, duty cycle 2. Value Electrical Characteristics ( Item Symbol Zero gate voltege drain IDSS ...

Page 3

... Gate to Source Voltage 1 4 0.6 0.4 0.2 0 150 200 Drain to Source Voltage V Tc (°C) 1 0.5 0.2 0.1 0.05 0.02 0.01 1.6 2.0 0.001 0.003 V (V) GS 2SK2795 Typical Output Characteristics 1 Pulse Test (V) DS Forward Transfer Admittance vs. Drain Current 25° –25°C 75° Pulse Test 0.01 0.3 0.1 0.3 1 ...

Page 4

... Drain to Source Saturation Voltage vs. Drain Current 10 3 25°C 1 75°C 0.3 0 –25°C 0.03 0. Drain Current I Input Capacitance vs. Gate to Source Voltage –6 –4 –2 0 Gate to Source Voltage V Gate to Source Cutoff Voltage vs. 1.0 0.8 0.6 0.4 0 Pulse Test 0 –25 0 100 300 ...

Page 5

... Gate to Source Votage 100 MHz 0.1 0.2 0 Gate to Source Voltege V GS Output Power, Drain Rational vs. Input Power 500 = 0 400 300 200 100 (V) Input power Pin (mW) 2SK2795 100 4 836.5MHz ...

Page 6

... Package Dimensions 4.5 ± 0.1 1.8 max 4 1.0 0.53 max 0.48 max 1.5 1.5 3.0 1.5 ± 0.1 0.44 max 0.44 max Hitachi Code EIAJ JEDEC Unit: mm UPAK SC–62 — ...

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