2sk3225 Renesas Electronics Corporation., 2sk3225 Datasheet

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2sk3225

Manufacturer Part Number
2sk3225
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
designed for high current switching applications.
FEATURES
• Low on-state resistance
• Low input capacitance
• Built-in gate protection diode
• TO-251/TO-252 package
Drain to Source Voltage
Gate to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note1. PW ≤ 10
.
The 2SK3225 is N-Channel MOS Field Effect Transistors
R
R
C
DS(on)1
DS(on)2
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
iss
2. Starting T
= 2100 pF TYP.
D13798EJ5V0DS00 (5th edition)
November 2006 NS CP(K)
= 18 mΩ MAX. (V
= 27 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty cycle ≤ 1%
= 25°C, V
Note1
Note2
Note2
C
A
GS
GS
= 25°C)
= 25°C)
DD
= 10 V, I
= 4.0 V, I
= 30 V, R
N-CHANNEL POWER MOS FET
D
I
I
P
P
T
T
I
E
V
V
V
D
D(DC)
D(pulse)
AS
The mark <R> shows major revised points.
= 17 A)
ch
stg
DSS
GSS(AC)
GSS(DC)
T1
T2
AS
= 17 A)
A
G
= 25 Ω, V
= 25°C)
DATA SHEET
SWITCHING
GS
= 20 → 0 V
−55 to +150
+20, −10
MOS FIELD EFFECT TRANSISTOR
±136
±20
±34
150
1.0
60
40
15
22
ORDERING INFORMATION
2SK3225
2SK3225-Z
PART NUMBER
mJ
°C
°C
W
W
V
V
V
A
A
A
TO-251 (MP-3)
TO-252 (MP-3Z)
2SK3225
PACKAGE
(TO-251)
(TO-252)
1999, 2000

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2sk3225 Summary of contents

Page 1

... N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance mΩ MAX DS(on mΩ MAX 4 DS(on)2 GS • Low input capacitance C = 2100 pF TYP. iss • ...

Page 2

... μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ Duty Cycle ≤ 1% Data Sheet D13798EJ5V0DS 2SK3225 MIN. TYP. MAX. UNIT μ ±10 μ A 1.0 1.5 2 mΩ mΩ 2100 ...

Page 3

... PW - Pulse Width - s = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 Single Pulse 100 100 Data Sheet D13798EJ5V0DS 2SK3225 100 120 140 160 - Case Temperature - ° 125 ˚C/W th(ch- 3.13 ˚C/W th(ch-C) 1000 3 ...

Page 4

... GATE TO SOURCE VOLTAGE Pulsed 0 100 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 2.0 1.5 1.0 0.5 0 1000 −50 Data Sheet D13798EJ5V0DS 2SK3225 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 4 Drain to Source Voltage - V DS Pulsed Gate to Source Voltage - V ...

Page 5

... I DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Data Sheet D13798EJ5V0DS 2SK3225 0 V 1.0 1.5 0.5 t d(off) t d(on Ω 100 - Drain Current - ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting T - Starting Channel Temperature - ch Data Sheet D13798EJ5V0DS 2SK3225 Ω → ≤ 100 125 150 ˚C ...

Page 7

... Note 0.5 ±0.1 2.3 ±0.3 2.3 ±0.3 Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Data Sheet D13798EJ5V0DS 2SK3225 2.3 ±0.2 0.5 ±0.1 Note 0.5 ±0.1 0.15 ±0.15 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3225 M8E 02. 11-1 ...

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