2sk3510 Renesas Electronics Corporation., 2sk3510 Datasheet - Page 7

• Manufacturer Part Number: 2sk3510
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
3) TO-263 (MP-25ZJ)
0.75±0.1
2.54 TYP.
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1.3±0.2
4
2.54 TYP.
1.4±0.2
0.7±0.2
10.6 MAX.
10.0 TYP.
1 2 3
1
10 TYP.
Source
Drain
2
2.54 TYP.
4
3
2.54 TYP.
Body
Diode
3.6±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4.8 MAX.
Remark
4.8 MAX.
0.5±0.2
1.3±0.2
1.3±0.2
2.8±0.2
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D15687EJ1V0DS
2) TO-262 (MP-25 Fin Cut)
4) TO-220SMD (MP-25Z)
Note This package is produced only in Japan.
0.75±0.3
2.54 TYP.
1.3±0.2
2.54 TYP.
0.75±0.3
4
1.4±0.2
1 2 3
10 TYP.
1
10 TYP.
2
2.54 TYP.
4
3
2.54 TYP.
Note
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4.8 MAX.
4.8 MAX.
0.5±0.2
1.3±0.2
1.3±0.2
2.8±0.2
2SK3510
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