fs4422 Fortune Semiconductor Corporation, fs4422 Datasheet - Page 4

• Manufacturer Part Number: fs4422
• Description: Single N-channel Enhancement Mode Power Mosfet
• Manufacturer: Fortune Semiconductor Corporation

6.
7.
Electrical Characteristics @T
Static Characteristics
BV
R
V
I
I
Diode Characteristics
V
t
Q
Dynamic Characteristics
R
C
C
C
t
t
t
t
Gate Charge Characteristics
Q
Q
Q
Q
Notes：
1. Pulse width ≦ 300us, duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing
Rev. 1.2
DSS
GSS
rr
d
r
d
f
Rthj-a
GS(th)
SD
(on)
(off)
DS(ON)
G
iss
oss
rss
rr
g
g
gs
gd
(10V)
(4.5V)
DSS
Symbol
1
Thermal Data
Electrical Characteristics
Symbol
1
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Rise Time
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Thermal Resistance Junction-ambient
2
2
Parameter
j
= 25℃ ( unless otherwise specified )
Parameter
j
j
= 25℃)
= 85℃)
2
Test Conditions
V
V
V
V
V
V
V
I
I
μ s
VGS=VDS=0V,F=1MHz
V
Frequency=1MHz
V
R
I
V
I
SD
SD
DS
DS
DS
GS
GS
GS
DS
DS
GS
GS
GS
GS
G
=1A,V
=11A,dI
=3Ω ,R
=1A
=11A
= V
=0V,V
=10V,V
=10V,V
= 0V, I
= 10V, I
= 4.5V, I
=30V V
=30V V
= ±20V V
GS
, I
GS
DS
L
D
SD
D
=1.35Ω ,
DS
DS
=0V
= 250uA
GS
GS
=15V
D
= 250uA
D
/dt=100A/
=15V,
=15V,
= 11A
DS
= 10A
= 0V
= 0V
Max. 75
=0V
Value
30
-
-
1.3
-
-
-
0.5
800
140
80
15
7
Min.
-
12.6
19.6
1.8
-
-
-
0.75
17.5
9.3
0.7
104
0
180
110
4.5
3,9
17.4
3.2
19.8
9.8
2.5
3.5
Typ.
℃/W
FS4422
Max.
-
15
24
2.5
1
5
100
1.0
21
12
0.85
125
0
220
140
6.5
5.5
25
5
24
12
Unit
Units
4/6
mΩ
mΩ
nC
nC
uA
uA
nA
pF
ns
Ω
ns
V
V
V