S25FL064K Meet Spansion Inc., S25FL064K Datasheet - Page 61

• Manufacturer Part Number: S25FL064K
• Description: 64-mbit Cmos 3.0 Volt Flash Memory With 80-mhz Spi Serial Peripheral Interface Multi I/o Bus
• Manufacturer: Meet Spansion Inc.

8.6
September 16, 2010 S25FL064K_00_02
AC Electrical Characteristics
Notes:
1. Clock high + Clock low must be less than or equal to 1/f
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
4. For multiple bytes after first byte within a page, t
5. Max Value t
Clock frequency for all instructions, except Read Data
(03h) 2.7V-3.6V V
Clock frequency Read Data instruction (03h)
Clock High, Low Time except Read Data (03h)
Clock High, Low Time for Read Data (03h) instruction
Clock Rise Time peak to peak
Clock Fall Time peak to peak
CS# Active Setup Time relative to CLK
CS# Not Active Hold Time relative to CLK
Data In Setup Time
Data In Hold Time
CS# Active Hold Time relative to CLK
CS# Not Active Setup Time relative to CLK
CS# Deselect Time (for Array Read -> Array Read)
CS# Deselect Time (for Erase or Program -> Read
Status Registers)
Volatile Status Register Write Time
Output Disable Time
Clock Low to Output Valid 2.7V-3.6V / 3.0V-3.6V
Clock Low to Output Valid (for Read ID instructions)
2.7V-3.6V / 3.0V-3.6V
Output Hold Time
HOLD# Active Setup Time relative to CLK
HOLD# Active Hold Time relative to CLK
HOLD# Not Active Setup Time relative to CLK
HOLD# Not Active Hold Time relative to CLK
HOLD# to Output Low-Z
HOLD# to Output High-Z
Write Protect Setup Time Before CS# Low
Write Protect Hold Time After CS# High
CS# High to Power-down Mode
CS# High to Standby Mode without Electronic Signature
Read
CS# High to Standby Mode with Electronic Signature
Read
CS# High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte) (4)
Additional Byte Program Time (After First Byte) (4)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
bytes programmed.
SE
D a t a
with <50K cycles is 200 ms and >50K & <100K cycles is 400 ms.
CC
and Industrial Temperature
Description
S h e e t
( P r e l i m i n a r y )
S25FL064K
BPN
= t
BP1
C
t
CRLH
.
t
CLH
+ t
t
t
t
t
t
t
t
t
t
Symbol
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
SUS
t
t
t
t
t
t
t
t
t
t
t
SHSL1
SHSL2
CLQV1
CLQV2
DP
CHHH
HHCH
, t
, t
SLCH
CHSL
DVCH
CHDX
CHSH
SHCH
CLQX
HLCH
CHHL
BP2
t
t
t
t
t
t
t
F
BP1
BP2
BE1
BE2
t
f
PP
SE
CE
W
R
CLL
CRLL
R
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(3)
(3)
* N (typical) and t
(1)
(1)
t
CH
t
t
t
t
t
t
Alt
CSS
DSU
t
CSH
CSH
t
t
t
t
DIS
HO
f
DH
HZ
V1
V2
LZ
, t
C
CL
BPN
= t
Min
100
DC
DC
0.1
0.1
10
50
50
20
6
8
5
5
2
5
5
5
0
5
5
5
5
BP1
+ t
BP2
Typ
120
150
2.5
0.7
10
30
30
15
* N (max), where N = number of
Spec
200/400(5)
8.5 / 7.5
1000
Max
7 / 6
800
1.8
80
33
12
20
15
50
12
30
7
7
3
3
3
Unit
MHz
MHz
V/ns
V/ns
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s
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