hrf503a Renesas Electronics Corporation., hrf503a Datasheet

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hrf503a

Manufacturer Part Number
hrf503a
Description
Silicon Schottky Barrier Diode For Rectifying - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet
Features
Ordering Information
Type No.
HRF503A
Outline
Low forward voltage drop and suitable for high effifiency rectifying.
DO-214 is suitable for high density surface mounting and high speed assembly.
Silicon Schottky Barrier Diode for Rectifying
1
Laser Mark
503A
HRF503A
Cathode mark
Mark
2
1. Cathode
2. Anode
Package Code
DO-214
ADE-208-401B(Z)
Rev 2

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hrf503a Summary of contents

Page 1

... Silicon Schottky Barrier Diode for Rectifying Features Low forward voltage drop and suitable for high effifiency rectifying. DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRF503A Outline HRF503A Laser Mark 503A Cathode mark Mark Cathode 2 ...

Page 2

... HRF503A Absolute Maximum Ratings ( Item Symbol *1 Repetitive peak reverse V RRM voltage *1 Average rectified current Non-Repetitive peak I FSM forward surge current Junction temperature Tj Storage temperature Tstg Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics ( Item ...

Page 3

... Forward voltage V (V) F Fig.1 Forward current Vs. Forward voltage 3 10 f=1MHz Pulse test 1.0 Reverse voltage V (V) R Fig.3 Capacitance Vs. Reverse voltage - 0 Reverse voltage V (V) Fig.2 Reverse current Vs. Reverse voltage 40 HRF503A Pulse test Ta=75°C Ta=25° ...

Page 4

... HRF503A Main Characteristic =25°C Sin Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current =15V Tj =125° D=1/3 3 D=1 -25 Case temperature Tc (°C) Fig.6 Average forward current Vs. Case temperature ...

Page 5

... Package Dimensions Cathode Mark 503A 1 7.0 ± 0.2 8.0 ± 0.3 1.2 ± 0 Cathode 2 Anode Hitachi Code DO-214 JEDEC Code DO-214 EIAJ Code Weight (g) HRF503A Unit : mm — 0.16 5 ...

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