p1604es Niko Semiconductor Co., Ltd., p1604es Datasheet - Page 2
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p1604es
Manufacturer Part Number
p1604es
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet
1.P1604ES.pdf
(4 pages)
1
2
NIKO-SEM
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
REV 1.0
2
2
1
2
2
2
2
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
P-Channel Enhancement Mode Field
t
t
C
C
V
C
Q
Q
Rg
d(on)
d(off)
Q
Q
I
t
t
t
oss
rss
S
SD
rr
iss
gs
gd
r
f
Effect Transistor
g
rr
DYNAMIC
V
V
V
GS
I
V
F
DS
GS
DS
= -25A, dl
2
= 0V, V
V
= 0.5V
= 0V, V
GS
= 0.5V
I
F
= -25A, V
= -10V, R
I
DS
(BR)DSS
D
(BR)DSS
DS
= -25A
F
= -15V, f = 1MHz
/dt = 100A / µS
= 0V, f = 1MHz
, V
GS
GEN
, I
GS
D
= 0V
=6Ω
≅ -25A,
= -10V,
Halogen-Free & Lead-Free
2229
334
293
4.3
27
48
15
15
43
62
50
16
9
P1604ES
Apr-11-2011
-1.3
-65
TO-263
nC
nS
nS
nC
pF
Ω
A
V