p1604es Niko Semiconductor Co., Ltd., p1604es Datasheet - Page 4
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p1604es
Manufacturer Part Number
p1604es
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet
1.P1604ES.pdf
(4 pages)
NIKO-SEM
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
REV 1.0
1
0.1
-50
↓
Operation in This Area is
Limited by R
On-Resistance VS Gate-To-Source
NOTE :
1.V
2.T
3.R
4.Single Pulse
GS
C
θJC
=25˚C
-25
= -10V
= 1.2˚C/W
0.1
T
Safe Operating Area
-V
1
0.0001
J
DS
, Junction Temperature(˚C)
DS(ON)
, Drain-To-Source Voltage(V)
0
1
Duty cycle=0.5
single pulse
25
0.001
50
=0.1
=0.05
=0.02
=0.01
P-Channel Enhancement Mode Field
75
Transient Thermal Response Curve
10
100
V
GS
I
T
D
=-10V
=-25A
0.01
1
, Square Wave Pulse Duration[sec]
Effect Transistor
125
10mS
100mS
1mS
DC
150
100
4
0.1
Single Pulse Maximum Power Dissipation
100
240
210
180
150
120
10
90
1
0.001
0.0
Source-Drain Diode Forward Voltage
1
0.2
-V
0.01
SD
, Source-To-Drain Voltage(V)
Halogen-Free & Lead-Free
Notes
1.Duty cycle, D= t1 / t2
2.R
3.T
4.R
Single Pulse Time(s)
0.4
J
thJC
thJC(t)
-T
150℃
C
0.1
10
= 1.2℃/W
= P*R
= r(t)*R
0.6
thJC(t)
thJC
1
P1604ES
0.8
Apr-11-2011
25℃
100
Single Pulse
R
T
C
θJC
=25˚C
10
= 1.2˚C/W
1.0
TO-263
100
1.2