p1604es Niko Semiconductor Co., Ltd., p1604es Datasheet - Page 3
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p1604es
Manufacturer Part Number
p1604es
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet
1.P1604ES.pdf
(4 pages)
0.08
0.06
0.04
0.02
NIKO-SEM
0.1
60
50
40
30
20
10
10
REV 1.0
0
8
6
4
2
0
0
0
0
0
VGS =-10V
VGS =-7V
V
On-Resistance VS Temperature
DS
I
D
=-20V
=-25A
Gate charge Characteristics
-V
-V
10
2
Output Characteristics
1
GS
Qg , Total Gate Charge(nC)
DS
, Gate-To-Source Voltage(V)
, Drain-To-Source Voltage(V)
VGS =-5V
20
4
2
P-Channel Enhancement Mode Field
30
6
3
VGS =-4.5V
VGS =-3.5V
40
8
ID=-25A
4
Effect Transistor
10
50
5
3
0.10
0.08
0.06
0.04
0.02
0.00
3000
2500
2000
1500
1000
500
60
50
40
30
20
10
0
0
0
0
0
On-Resistance VS Drain Current
Capacitance Characteristic
10
1
Transfer Characteristics
5
-V
-I
-V
D
DS
GS
, Drain-To-Source Current(A)
, Drain-To-Source Voltage(V)
, Gate-To-Source Voltage(V)
Halogen-Free & Lead-Free
20
2
10
125℃
30
3
15
VGS =-4.5V
-20℃
40
4
20
P1604ES
25℃
Apr-11-2011
50
25
5
TO-263
VGS =-10V
VGS =-5V
VGS =-7V
COSS
CRSS
CISS
30
60
6