fmc13n60e Fuji Electric holdings CO.,Ltd, fmc13n60e Datasheet
fmc13n60e
Manufacturer Part Number
fmc13n60e
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMC13N60E.pdf
(5 pages)
FMI13N60E
Super FAP-E
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Description
Thermal resistance
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Thermal Characteristics
Features
Maintains both low power loss and low noise
Lower R
More controllable switching dv/dt by gate resistance
Smaller V
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
E
See to 'Avalanche Energy' graph.
AS
limited by maximum channel temperature and avalanche current.
DS
GS
(on) characteristic
ringing waveform during switching
AS
=6A, L=24.0mH, Vcc=60V, R
3
series
G
=50Ω
Symbol
BV
V
I
I
R
g
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
Q
Q
I
V
trr
Qrr
Symbol
Rth (ch-c)
Rth (ch-a)
DSS
GSS
AV
fs
GS
SD
DS
G
GS
GD
DSS
(th)
(on)
Conditions
I
I
V
V
V
I
I
V
V
f=1MHz
V
V
I
R
V
I
V
L=2.36mH, Tch=25°C
I
I
-di/dt=100A/µs, Tch=25°C
D
D
D
D
D
D
F
F
DS
DS
GS
DS
GS
cc
GS
cc
GS
GS
=13A, V
=13A, V
=250µA, V
=250µA, V
=6.5A, V
=6.5A, V
=6.5A
=13A
=300V
=300V
=600V, V
=480V, V
=±30V, V
=25V
=0V
=10V
=10V
=10Ω
GS
GS
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Note *5 : I
Symbol
V
V
I
I
V
I
E
E
dV/dt
-di/dt
P
T
T
GS
DS
T-Pack(L)
D
DP
AR
=0V, T
=0V
ch
stg
DS
DSX
GS
AS
AR
D
GS
DS
=25V
GS
GS
DS
=10V
Outline Drawings [mm]
=0V
=V
=0V
=0V
=0V
Channel to ambient
See to the 'Transient Themal impeadance' graph.
1
GS
Test Conditions
F
F
Channel to case
ch
≤-I
≤-I
=25°C
D
D
, -di/dt=100A/µs, Vcc≤BV
, dv/dt=5.2kV/µs, Vcc≤BV
T
T
N-CHANNEL SILICON POWER MOSFET
ch
ch
=25°C
=125°C
Characteristics
-55 to + 150
DSS
DSS
471.5
, Tch≤150°C.
22.5
, Tch≤150°C.
1.67
600
600
±52
±30
100
225
150
±13
5.2
13
min.
min.
600
2.5
7.5
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Equivalent circuit schematic
2150
0.90
0.50
kV/µs
typ.
190
100
typ.
3.0
0.7
A/µs
Unit
10
15
14
21
15
60
17
18
mJ
mJ
8
8
°C
°C
-
-
-
-
V
V
A
A
V
A
W
Gate(G)
FUJI POWER MOSFET
0.560
max.
3225
max.
22.5
0.58
31.5
25.5
1.08
75.0
250
100
285
150
3.5
25
21
12
90
27
-
-
-
-
-
Drain(D)
Source(S)
V
Remarks
Ta=25°C
Tc=25°C
GS
Note*1
Note*2
Note*3
Note*4
Note*5
= -30V
°C/W
°C/W
Unit
Unit
µA
nA
pF
nC
µC
ns
µs
Ω
V
V
S
A
V
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fmc13n60e Summary of contents
Page 1
FMI13N60E 3 Super FAP-E series Features Maintains both low power loss and low noise Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage ...
Page 2
FMI13N60E Allowable Power Dissipation PD=f(Tc) 300 250 200 150 100 ° Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 µ VDS [V] Typical ...
Page 3
FMI13N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 max. 0.6 typ. 0.4 0.2 0.0 -50 - Tch [ C] ° Typical Gate Charge Characteristics VGS=f(Qg):ID=13A,Tch=25°C 14 Vcc= 120V 12 300V 480V 10 8 ...
Page 4
FMI13N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=13A 700 600 500 I =6A AS 400 I =8A AS 300 I =13A AS 200 100 starting Tch [ C] ° Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 ...
Page 5
FMI13N60E 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be ...