fmc13n60e Fuji Electric holdings CO.,Ltd, fmc13n60e Datasheet - Page 2

• Manufacturer Part Number: fmc13n60e
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMI13N60E
300
250
200
150
100
100
0.1
50
40
30
20
10
10
0
0
1
0.1
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25
25
4
µ
µ
s pulse test,Tch=25
50
8
1
VDS [V]
ID [A]
Tc [
75
12
°
C]
100
16
10
°
C
125
20
°
C
150
100
24
2
2
10
10
100
10
10
10
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
-1
-2
1
2
1
0
10
0
2
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
Safe Operating Area
I
0
D
=f(V
VGS=4.5V
Pow er loss waveform :
Pow er loss waveform :
Square w aveform
Square w aveform
DS
):Duty=0(Single pulse),Tc=25°C
5
3
P
P
P
t
t
D
D
D
µ
10
s pulse test,VDS=25V,Tch=25 C
10
1
µ
s pulse test,Tch=25
4
VGS[V]
5V
VDS [V]
ID [A]
15
5
10
20
2
FUJI POWER MOSFET
5.5V
6V
6
°
10V
C
25
°
100 s
10 s
1ms
D.C.
t=
1 s
µ
10
µ
30
µ
7
3