w83176g-735 Winbond Electronics Corp America, w83176g-735 Datasheet - Page 9
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w83176g-735
Manufacturer Part Number
w83176g-735
Description
Winbond 3 Dimm Ddr Zero Delay Buffer
Manufacturer
Winbond Electronics Corp America
Datasheet
1.W83176G-735.pdf
(13 pages)
7. SPECIFICATIONS
7.1
Stresses greater than those listed in this table may cause permanent damage to the device.
Precautions should be taken to avoid application of any voltage higher than the maximum rated
voltages to this circuit. Maximum conditions for extended periods may affect reliability.
inputs must always be tied to an appropriate logic voltage level (Ground or VDD).
7.2
VDD = AVDD = 2.5V ( 5 % , TA = 0(C to +70(C, Test load = 10 pF
Operating clock
frequency
Input Clock Duty Cycle
Dynamic Supply Current
Cycle to Cycle Jitter
Output to Output Skew
Output clock Rise time
Output clock Fall time
Output clock Duty Cycle
Output differential-pair
crossing voltag
VDD , AVDD
ABSOLUTE MAXIMUM RATINGS
AC CHARACTERISTICS
SYMBOL
PARAMETER
3 DIMM DDR ZERO DELAY BUFFER FOR SIS CHIPSET
T
T
T
STG
B
A
Voltage on any pin with respect to GND
SYMBOL
C-Cjitter
Tskew
Dtot
Dtin
Voc
FIN
Idd
Tor
Tof
Operating Temperature
Ambient Temperature
Storage Temperature
PARAMETER
(Vdd/2)-
MIN
100
650
650
0.2
40
45
- 6 -
W83176R-735/W83176G-735
Vdd/
TYP
2
(Vdd/2)
+ 0.2
MAX
200
300
200
100
950
950
60
55
UNITS
MHz
mA
ps
ps
ps
ps
%
%
V
- 0.5 V to + 3.6 V
- 65°C to + 150°C
- 55°C to + 125°C
0°C to + 70°C
Fin=100 to 200Mhz
Fout=100 to
200Mhz
Fout=100 to
200Mhz
Fout=100 to
200Mhz
Fout=100 to
200Mhz
Fout=100 to
200Mhz
Fout=100 to
200Mhz
TEST CONDITIONS
RATING
Unused