mc33662 Freescale Semiconductor, Inc, mc33662 Datasheet - Page 10

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mc33662

Manufacturer Part Number
mc33662
Description
Lin 2.1 / Saej2602-2, Lin Physical Layer
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
values reflect the approximate parameter means at T
10
33662
LIN PHYSICAL LAYER - TRANSCEIVER LIN
Notes
Operating Voltage Range
Supply Voltage Range
Voltage Range (within which the device is not destroyed)
Current Limitation for Driver Dominant State
Input Leakage Current at the Receiver
Leakage Output Current to GND
Control Unit Disconnected from Ground
V
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center
Receiver Threshold Hysteresis
LIN dominant level with 500 Ω, 680 Ω and 1.0 kΩ load on the LIN bus
V
GND_SHIFT
LIN Wake-up Threshold from Sleep Mode
LIN Pull-up Resistor to V
LIN Internal Capacitor
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
10.
11.
12.
Characteristics under conditions 7.0 V ≤ V
BAT
BAT
5.
6.
7.
8.
9.
Driver ON, V
Driver off; V
Driver Off; 8.0 V
V
GND
(V
(V
BUS
_SHIFT
TH_DOM
TH_REC
Disconnected; V
Parameters guaranteed for 7.0 V
Voltage range at the battery level, including the reverse battery diode.
Loss of local ground must not affect communication in the residual network.
Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
LIN threshold for a dominant state.
LIN threshold for a recessive state.
This parameter is guaranteed by process monitoring but not production tested.
When an over-temperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This
parameter is tested with a test mode on ATE and characterized at laboratory.
DEVICE
V
SUP
- V
+ V
BUS
= V
BUS
TH_DOM
TH_REC
SUP
= 0 V; V
<
= 18 V
V
(11)
SUP_DEVICE
; V
BAT
)
)/2
SUP
(9)
BAT
(6)
(10)
BAT
<
Characteristic
(12)
18 V; 8.0 V
= 12 V; 0 < V
= 12 V
= GND; 0 V < V
(7)
<
V
BUS
V
SUP
BUS
(5)
< 18 V
SUP
<
18 V.
BUS
18 V; V
≤ 18 V, - 40°C ≤ T
< 18 V
A
BUS
= 25°C under nominal conditions, unless otherwise noted.
(8)
V
BAT
;
A
V
I
V
I
BUS_PAS_DOM
I
BUS_PAS_REC
LINDOM_LEVEL
BUS_NO_GND
I
V
V
T
SUP_NON_OP
≤ 125°C, GND = 0 V, unless otherwise noted. Typical
BUSNO_BAT
V
V
V
SHIFT_GND
I
LINSD_HYS
Symbol
SHIFT_BAT
V
R
BUS_LIM
BUS_CNT
T
BUSDOM
BUSREC
V
V
BUSWU
V
SLAVE
C
LINSD
SUP
HYS
BAT
LIN
0.475
Min
-0.3
-1.0
-1.0
150
8.0
7.0
0.6
40
20
0
0
Analog Integrated Circuit Device Data
Typ
160
0.5
4.3
90
30
20
Freescale Semiconductor
11.5%
11.5%
0.525
0.175
Max
200
200
1.0
0.4
0.3
5.0
18
18
40
20
10
60
30
V
V
V
V
V
V
V
Unit
mA
mA
mA
µA
µA
pF
°C
°C
SUP
SUP
SUP
SUP
SUP
BAT
BAT
V
V
V
V

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