mc33662 Freescale Semiconductor, Inc, mc33662 Datasheet - Page 11

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mc33662

Manufacturer Part Number
mc33662
Description
Lin 2.1 / Saej2602-2, Lin Physical Layer
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Table 5. Static Electrical Characteristics (continued)
values reflect the approximate parameter means at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
INH OUTPUT PIN
Notes
WAKE INPUT PIN
Driver ON Resistance (Normal Mode)
Current load capability
Leakage Current (Sleep Mode)
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
High to Low Detection Threshold (5.5 V < V
Low to High Detection Threshold (5.5 V < V
Hysteresis (5.5 V < V
High to Low Detection Threshold (7 V
Low to High Detection Threshold (7 V
Hysteresis (7 V
Wake-up Input Current (V
13.
Characteristics under conditions 7.0 V ≤ V
I
From 7.0 V < V
0 < V
INH
When an over-temperature shutdown occurs, the INH high side is switched off and the LIN transmitter and receiver are in recessive
state. This parameter is tested with a test mode on ATE and characterized at laboratory.
= 50 mA
INH
< V
SUP
V
SUP
SUP
SUP
< 18 V
< 27 V)
< 7 V)
WAKE
Characteristic
(13)
< 27 V)
V
V
SUP
SUP
SUP
SUP
< 27 V)
< 27 V)
< 7 V)
< 7 V)
SUP
≤ 18 V, - 40°C ≤ T
A
= 25°C under nominal conditions, unless otherwise noted.
A
T
≤ 125°C, GND = 0 V, unless otherwise noted. Typical
I
V
V
INHSD_HYS
INH_LOAD
Symbol
V
V
V
V
T
INH
WUHYS1
WUHYS2
I
WUHL1
WULH1
WUHL2
WULH2
LEAK
INHSD
I
WU
ON
Min
-5.0
150
2.0
2.4
0.2
2.4
2.9
0.2
STATIC ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Typ
160
20
Max
200
5.0
3.9
4.3
0.8
3.9
4.3
0.8
5.0
50
30
Unit
mA
μA
°C
°C
µA
Ω
V
V
V
V
V
V
33662
11

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