m66256fp Renesas Electronics Corporation., m66256fp Datasheet - Page 3

• Manufacturer Part Number: m66256fp
• Description: 5120 ? 8-bit Line Memory Fifo
• Manufacturer: Renesas Electronics Corporation.

M66256FP
Absolute Maximum Ratings
Supply voltage
Input voltage
Output voltage
Power dissipation
Storage temperature
Recommended Operating Conditions
Supply voltage
Supply voltage
Operating ambient temperature
Electrical Characteristics
"H" input voltage
"L" input voltage
"H" output voltage
"L" output voltage
"H" input current
"L" input current
Off state "H" output current
Off state "L" output current
Operating mean current dissipation
Input capacitance
Off state output capacitance
Function
When write enable input WE is "L", the contents of data inputs D
with rise edge of write clock input WCK. At this time, the write address counter is also incremented simultaneously.
The write function given below are also performed in synchronization with rise edge of WCK.
When WE is "H", a write operation to memory is inhibited and the write address counter is stopped.
When write reset input WRES is "L", the write address counter is initialized.
When read enable input RE is "L", the contents of memory are output to data outputs Q
rise edge of read clock input RCK. At this time, the read address counter is also incremented simultaneously.
The read functions given below are also performed in synchronization with rise edge of RCK.
When RE is "H", a read operation from memory is inhibited and the read address counter is stopped. The outputs are in
the high impedance state.
When read reset input RRES is "L", the read address counter is initialized.
REJ03F0250-0200 Rev.2.00 Sep 14, 2007
Page 3 of 13
Item
Item
Item
V
V
V
Pd
Tstg
V
GND
Topr
V
V
V
V
I
I
I
I
I
C
C
IH
IL
OZH
OZL
CC
Symbol
Symbol
Symbol
CC
I
O
CC
IH
IL
OH
OL
I
O
V
CC
Min
2.0









− 0.8
Min
4.5

0
−0.5 to V
−0.5 to V
−0.5 to +7.0
−65 to 150
Ratings
Typ
440











0
CC
CC
to D
+ 0.5
+ 0.5
7
(Ta = 0 to 70°C, V
Max
0.55
−1.0
−5.0
Typ
are written into memory in synchronization
0.8
1.0
5.0
80
10
15



5
0
(Ta = 0 to 70°C, unless otherwise noted)
Unit
mA
µA
µA
µA
µA
pF
pF
V
V
V
V
0
I
I
V
V
V
V
V
t
f = 1 MHz
f = 1 MHz
Max
Unit
to Q
mW
OH
OL
WCK
5.5
°C
70

I
I
O
O
I
V
V
V
= V
= GND
= V
CC
= 4 mA
= V
= GND
= −4 mA
, t
7
= 5 V ± 10%, GND = 0 V)
CC
CC
RCK
in synchronization with
CC
Test Conditions
, GND, Output open
= 25 ns
A value based on
GND pin
Ta = 25°C
WE, WRES, WCK,
RE, RRES, RCK,
D
WE, WRES, WCK,
RE, RRES, RCK,
D
0
0
to D
to D
Conditions
7
7
Unit
°C
V
V