at49bv642dt ATMEL Corporation, at49bv642dt Datasheet

no-image

at49bv642dt

Manufacturer Part Number
at49bv642dt
Description
64-megabit 4m X 16 3-volt Only Flash Memory
Manufacturer
ATMEL Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
at49bv642dt-70TU
Manufacturer:
ATMEL
Quantity:
2 331
Part Number:
at49bv642dt-70TU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Features
1. Description
The AT49BV642D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device can be read or reprogrammed off a single 2.7V power supply, making it
ideally suited for in-system programming.
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors.
The end of program or erase is detected by Data Polling or toggle bit.
The VPP pin provides data protection and faster programming times. When the V
input is below 0.4V, the program and erase functions are inhibited. When V
1.65V or above, normal program and erase operations can be performed. With V
10.0V, the program (dual-word program command) operation is accelerated.
A six-word command (Enter Single Pulse Program Mode) to remove the requirement
of entering the three-word program sequence is offered to further improve program-
ming time. After entering the six-word code, only single pulses on the write control
lines are required for writing into the device. This mode (Single Pulse Word Program)
is exited by powering down the device, by taking the RESET pin to GND or by a high-
to-low transition on the V
pend/Resume and Read Reset commands will not work while in this mode; if entered
they will result in data being programmed into the device. It is not recommended that
the six-word code reside in the software of the final product but only exist in external
programming code.
Single Voltage Operation Read/Write: 2.65V - 3.6V
2.7V - 3.6V Read/Write
Access Time – 70 ns
Sector Erase Architecture
Fast Word Program Time – 10 µs
Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms
Suspend/Resume Feature for Erase and Program
Low-power Operation
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
– Eight 4K Word Sectors with Individual Write Lockout
– Supports Reading and Programming Data from Any Sector by Suspending Erase
– Supports Reading Any Word by Suspending Programming of Any Other Word
– 10 mA Active
– 15 µA Standby
of a Different Sector
PP
input. Erase, Erase Suspend/Resume, Program Sus-
PP
PP
is at
PP
at
64-megabit
(4M x 16)
3-volt Only
Flash Memory
AT49BV642D
AT49BV642DT
3631A–FLASH–04/06

Related parts for at49bv642dt

at49bv642dt Summary of contents

Page 1

... It is not recommended that the six-word code reside in the software of the final product but only exist in external programming code. 64-megabit (4M x 16) 3-volt Only Flash Memory AT49BV642D AT49BV642DT 3631A–FLASH–04/06 ...

Page 2

Pin Configurations Pin Name I/O0 - I/O15 A0 - A21 RESET VPP VCCQ 2.1 TSOP Top View (Type 1) AT49BV642D(T) 2 Pin Function Data Inputs/Outputs Addresses Chip Enable Output Enable Write Enable Reset Write Protection and ...

Page 3

... Erase Before a word can be reprogrammed it must be erased. The erased state of the memory bits is a logical “1”. The entire memory can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command. ...

Page 4

Word Programming The device is programmed on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The programming address and data are latched in the fourth cycle. The device will ...

Page 5

... During a program or erase operation, successive attempts to read data from the memory will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle ...

Page 6

... Program Suspend/Program Resume The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. After the Program Suspend command is given, the device requires a maximum of 10 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read from any other word within the device ...

Page 7

Common Flash Interface (CFI) Common Flash Interface (CFI published, standardized data structure that may be read from a Flash device. CFI allows system software to query the installed device to determine the config- urations, various electrical and ...

Page 8

Figure 3-1. Data Polling Algorithm (Configuration Register = 00) START Read I/O7 - I/O0 Addr = VA YES I/O7 = Data I/O3, I/ YES Read I/O7 - I/O0 Addr = VA I/O7 = Data? NO Program/Erase ...

Page 9

Figure 3-3. Toggle Bit Algorithm (Configuration Register = 00) START Read I/O7 - I/O0 Read I/O7 - I/O0 Toggle Bit = Toggle? YES NO I/O3, I/ YES Read I/O7 - I/O0 Twice Toggle Bit = Toggle? YES Program/Erase ...

Page 10

Status Bit Table Configuration Register Programming Erasing Erase Suspended & Read Erasing Sector Erase Suspended & Read Non-erasing Sector Erase Suspended & Program Non-erasing Sector Erase Suspended & Program Suspended and Reading from Non-suspended Sectors Program Suspended & Read ...

Page 11

Command Definition Table Bus Command Sequence Cycles Addr Read 1 Addr Chip Erase 6 555 Sector Erase 6 555 Word Program 4 555 (4) Dual-Word Program 5 555 Enter Single-pulse Program 6 555 Mode Single-pulse Word Program 1 Addr ...

Page 12

Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages Except V PP (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V V Input Voltage PP with Respect to ...

Page 13

... SA26 32K SA27 32K SA28 32K SA29 32K SA30 32K SA31 32K SA32 32K 3631A–FLASH–04/06 8. Memory Organization – x16 Address Range (A21 - A0) Sector 00000 - 00FFF SA33 01000 - 01FFF SA34 02000 - 02FFF SA35 03000 - 03FFF SA36 04000 - 04FFF SA37 05000 - 05FFF ...

Page 14

... SA93 32K SA94 32K SA95 32K SA96 32K SA97 32K SA98 32K SA99 32K AT49BV642D( Memory Organization – AT49BV642D (Continued) x16 Address Range (A21 - A0) Sector 1D8000 - 1DFFFF SA100 1E0000 - 1E7FFF SA101 1E8000 - 1EFFFF SA102 1F0000 - 1F7FFF SA103 1F8000 - 1FFFFF SA104 ...

Page 15

... SA65 F0000 - F7FFF SA66 F8000 - FFFFF SA67 100000 - 107FFF SA68 108000 - 10FFFF SA69 110000 - 117FFF SA70 118000 - 11FFFF SA71 AT49BV642D(T) AT49BV642DT (Continued) Size Address Range (Words) (A21 - A0) 32K 120000 - 127FFF 32K 128000 - 12FFFF 32K 130000 - 137FFF 32K 138000 - 13FFFF 32K 140000 - 147FFF ...

Page 16

... SA128 308000 - 30FFFF SA129 310000 - 317FFF SA130 318000 - 31FFFF SA131 320000 - 327FFF SA132 328000 - 32FFFF SA133 330000 - 337FFF SA134 338000 - 33FFFF AT49BV642DT (Continued) Size Address Range (Words) (A21 - A0) 32K 340000 - 347FFF 32K 348000 - 34FFFF 32K 350000 - 357FFF 32K 358000 - 35FFFF 32K ...

Page 17

... Notes: 1. The VPP pin can be tied can Refer to program cycle waveforms (min) = 1.65V. IHPP 5. V (max) = 0.4V. ILPP 6. Manufacturer Code: 001FH; Device Code: 01D6H - AT49BV642D; 01D2H - AT49BV642DT. 3631A–FLASH–04/06 Industrial ( RESET ...

Page 18

DC Characteristics Symbol Parameter I Input Load Current LI I Output Leakage Current Standby Current CMOS Active Read Current Programming Current CC1 CC V Input Low Voltage ...

Page 19

AC Read Characteristics Symbol Parameter t Read Cycle Time RC t Access, Address to Data Valid ACC t Access Data Valid Data Valid OE t CE, OE High to Data Float DF t ...

Page 20

AC Word Load Characteristics Symbol Parameter Address, OE Setup Time AS OES t Address Hold Time AH t Chip Select Setup Time CS t Chip Select Hold Time CH t Write Pulse Width (WE or CE) ...

Page 21

Program Cycle Characteristics Symbol Parameter t Word Programming Time BP t Word Programming Time in Dual Programming Mode BPD t Address Setup Time AS t Address Hold Time AH t Data Setup Time DS t Data Hold Time DH ...

Page 22

Data Polling Characteristics Symbol Parameter t Data Hold Time Hold Time OEH Output Delay OE t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See t ...

Page 23

... The device does not remain in identification mode if powered down. 4. The device returns to standard operation mode. 5. Manufacturer Code: 001FH(x16) Device Code: 01D6H – AT49BV642D; 01D2H – AT49BV642DT. 6. Either one of the Product ID Exit commands can be used. 3631A–FLASH–04/06 (1) LOAD DATA AA TO ADDRESS 555 ...

Page 24

Common Flash Interface Definition Table Address Data 10h 0051h 11h 0052h 12h 0059h 13h 0002h 14h 0000h 15h 0041h 16h 0000h 17h 0000h 18h 0000h 19h 0000h 1Ah 0000h 1Bh 0027h 1Ch 0036h 1Dh 0090h 1Eh 00A0h 1Fh 0004h ...

Page 25

... Common Flash Interface Definition Table (Continued) Address Data 41h 0050h 42h 0052h 43h 0049h 44h 0031h 45h 0030h 46h 0087h 0000h AT49BV642DT or 47h 0001h AT49BV642D 48h 0000h 49h 0000h 4Ah 0080h 4Bh 0003h 4Ch 0003h 3631A–FLASH–04/06 Comments VENDOR SPECIFIC EXTENDED QUERY “ ...

Page 26

... Ordering Information 30.1 Green Package (Pb/Halide-free/RoHS Compliant) I (mA ACC (ns) Active Standby 70 15 0.025 48T 48-lead, Plastic Thin Small Outline Package (TSOP) AT49BV642D(T) 26 Ordering Code Package AT49BV642D-70TU 48T AT49BV642DT-70TU Package Type Operation Range Industrial (-40° to 85° C) 3631A–FLASH–04/06 ...

Page 27

Packaging Information 31.1 48T – TSOP Pin 1 Identifier e E Notes: 1. This package conforms to JEDEC reference MO-142, Variation DD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion 0.15 mm ...

Page 28

Revision History Revision No. Revision A – April 2006 AT49BV642D(T) 28 History • Initial Release 3631A–FLASH–04/06 ...

Page 29

... Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. © Atmel Corporation 2006. All rights reserved. Atmel registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. Atmel Operations Memory ...

Related keywords