is42sm16200c Integrated Silicon Solution, Inc., is42sm16200c Datasheet - Page 27

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is42sm16200c

Manufacturer Part Number
is42sm16200c
Description
1m X 16bits X 2banks Low Power Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
Rev. 00A | July 2010
Table11C: 1.8V DC Characteristic (DC operating conditions unless otherwise noted)
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating Current
Auto Refresh Current (4K Cycle)
Self
Refresh
Current
Deep Power Down Mode Current
Note :
1. Measured with outputs open.
2. Refresh period is 64ms.
P
Parameter
2 Banks
1 Bank
PASR
PASR
t
-25~45°C
-25~45°C
45~85°C
45~85°C
TCSR
TCSR
ICC2NS
ICC3NS
ICC2PS
ICC3PS
ICC2N
ICC2N
ICC3N
ICC3N
ICC2P
ICC3P
S
Sym
ICC1
ICC4
ICC5
ICC6
ICC7
Burst Length=1, One Bank Active,
tRC ≥ tRC(min) IOL = 0 mA
CKE ≤ VIL(max), tCK = 10ns
CKE & CLK ≤ VIL(max), tCK = ∞
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during 2
Input signals are changed one time during 2
clks.
CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞
Input signals are stable.
CKE ≤ VIL(max), tCK = 10ns
CKE & CLK ≤ VIL(max), tCK = ∞
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during 2
Input signals are changed one time during 2
clks.
CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞
Input signals are stable.
tCK>tCK(min), IOL = 0 mA, Page Burst
All Banks Activated, tCCD = 1 clk
tRC ≥ tRFC(min), All Banks Active
CKE ≤ 0.2V
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T
Test Condition
t C
- dram@issi.com
diti
-60
60
Speed
200
170
180
150
1.0
0.5
50
80
80
18
18
10
40
10
9
9
5
-75
55
IS42SM/RM/VM16200C
U it
Unit
Advanced Information
mA
mA
mA
mA
mA
mA
uA
uA
uA
N t
Note
1
1
2
27

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