is43dr16640a-3dbi Integrated Silicon Solution, Inc., is43dr16640a-3dbi Datasheet - Page 21

• Manufacturer Part Number: is43dr16640a-3dbi
• Description: 1gb X8, X16 Ddr2 Sdram
• Manufacturer: Integrated Silicon Solution, Inc.

IS43DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00A, 12/11/2009
Row Cycle Time
Auto Refresh Row
Cycle Time
Row Active Time
Row Active to
Column Address
Delay
Row Active to Row
Active Delay
Four Activate
Window
Column Address to
Column Address
Delay
Row Precharge Time
Write Recovery Time
Auto precharge Write
recovery + Precharge
Time
Clock Cycle Time
Clock High Level
Width
Clock Low Level
Width
Data‐Out Edge to
Clock Skew Edge
DQS‐Out Edge to
Clock Skew Edge
DQS‐Out Edge to
Clock Skew Edge
Data‐Out Hold Time
from DQS
Data Hold Skew
Factor
Clock Half Period
Parameter
tCK3 (CL=3)
tCK4 (CL=4)
tCK5 (CL=5)
tCK6 (CL=6)
tCK7 (CL=7)
tFAW(x16)
tRRD(x16)
tFAW(x8)
tRRD(x8)
Symbol
tDQSCK
tDQSQ
tQHS
tRCD
tCCD
tDAL
tRFC
tRAS
tWR
tQH
tRC
tCH
tAC
tHP
tRP
tCL
127.5
‐0.45
37.5
3.75
0.45
0.45
DDR2‐533C
Min
‐0.5
7.5
60
45
15
10
50
15
15
2
5
‐37C
Max
0.55
0.55
0.45 ‐0.45 0.45
70K
400
0.4
0.3
8
8
127.5
DDR2‐667D
37.5
3.75
0.48
0.48
Min
‐0.4
7.5
60
45
15
10
50
15
15
2
5
3
Min = tCH(min)/tCL(min), Max = n/a
‐3D
Min = tHP(min)‐tQHS, Max = n/a
Max
0.52
0.52
0.24
70K
340
0.4
Min = tWR+tRP, Max = n/a
8
8
8
127.5
‐0.35 0.35 ‐0.35 0.35 ‐0.33 0.325
Min
3.75
0.48
0.48
DDR2‐800E
‐0.4
7.5
2.5
60
45
15
10
35
45
15
15
2
3
‐25E
Max
0.52
0.52
70K
300
0.4
0.2
8
8
8
127.5
57.5
12.5
12.5
3.75
0.48
0.48
DDR2‐800D
Min
‐0.4
7.5
2.5
2.5
45
10
35
45
15
2
‐25D
Max
0.52
0.52
70K
300
0.4
0.2
8
8
8
58.13
127.5
13.13
13.13
1.875
‐0.35
DDR2‐1066F
0.48
0.48
Min
7.5
2.5
45
10
35
45
15
2
3
‐19F
0.175
Max
0.52
0.52
0.35
70K
250
8
8
8
Units Notes
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ps
ns
21
11
21
20
12
2
2
2
5