cy62127dv18 Cypress Semiconductor Corporation., cy62127dv18 Datasheet - Page 4

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cy62127dv18

Manufacturer Part Number
cy62127dv18
Description
1m 64k X 16 Static Ram Semiconductor
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
DC Electrical Characteristics
Capacitance
Thermal Resistance
Document #:
Note:
5. Tested initially and after any design or proces changes that may affect these parameters.
V
V
V
V
I
I
I
I
I
C
C
IX
OZ
CC
SB1
SB2
Parameter
Parameter
JA
JC
OH
OL
IH
IL
IN
OUT
Parameter
38-05226
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
rent
Automatic CE Power-down
Current
Automatic CE Power-down
Current
Thermal Resistance (Junction to
Ambient)
Thermal Resistance (Junction to
Case)
[5]
CC
Operating Supply Cur-
[5]
Description
Rev.
[5]
CMOS Inputs
CMOS Inputs
Description
**
Input Capacitance
Output Capacitance
(Over the Operating Range)
Description
I
I
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f
= 0 (OE, WE, BHE and BLE)
CE
V
= 0, V
OH
OL
MAX
IN
IN
1
1
= 0.1 mA
MAX
> V
= 0.1 mA
> V
> V
> V
(Address and Data Only), f
CC
INFORMATION
CC
Still Air, soldered on a 3 x 4.5 inch, two-layer
printed circuit board
CC
CC
CC
= 1/t
=1.95V
I
O
< V
ADVANCE
Test Conditions
< V
0.2V or V
0.2V, V
RC
0.2V, CE
0.2V, CE
CC
CC
, Output Disabled
TA = 25°C, f = 1 MHz
V
IN
CC
Test Conditions
V
V
Vcc = 1.95V, I
= 0mA, CMOS
level
IN
< 0.2V, f =
2
2
CC
CC
< 0.2V,
< 0.2V,
= V
< 0.2V, f
Test Conditions
= 1.65V
= 1.65V
CC(typ)
OUT
LL
LL
L
L
Min.
–0.2
1.4
1.4
–1
–1
CY62127DV18-55
Typ.
CY62127DV18
2.5
0.5
0.5
0.5
0.5
0.5
Max.
6
8
BGA
[4]
55
16
V
Max.
MoBL2
0.2
CC
0.2
0.4
+1
+1
5
1
3
2
3
2
+
Page 4 of 13
Unit
pF
pF
Unit
C/W
C/W
Unit
mA
V
V
V
V
A
A
A
A
®

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