lh28f640sp Sharp Microelectronics of the Americas, lh28f640sp Datasheet - Page 12

• Manufacturer Part Number: lh28f640sp
• Description: Flash Memory 64mbit 4mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. Refer to Table 2 to determine whether the device is selected or de-selected depending on the state of CE
4. DQ refers to DQ
5. RP# at GND±0.2V ensures the lowest power consumption.
6. Command writes involving block erase, (page buffer) program, block lock configuration or OTP program are reliably
7. Refer to Table 5 for valid D
8. Never hold OE# low and WE# low at the same timing.
9. Refer to Appendix of LH28F640SP series for more information about query code.
10. STS is V
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Read Query
Write
Refer to DC Characteristics for V
executed when V
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program and page
buffer program inactive), (page buffer) program suspend mode, or reset mode.
Mode
OL
IL
or V
when the WSM (Write State Machine) is executing internal block erase, (page buffer) program or OTP
15
PEN
IH
-DQ
Notes
6,7,8
8,9
for control pins and addresses, and V
=V
8
5
8
0
PENH
in word mode (BYTE#=V
IN
RP#
V
V
V
V
V
V
V
and V
during a write operation.
IH
IH
IH
IH
IH
IH
IL
PENLK
CC
CE
PEN
Disabled
Enabled
Enabled
Enabled
Enabled
Enabled
=2.7V-3.6V.
0,1,2
and V
≤V
X
Table 4. Bus Operation
PENLK
(3)
PENH
, memory contents can be read, but cannot be altered.
OE#
IH
V
V
V
V
V
X
X
voltages.
LHF64PZ8
IL
IH
IL
IL
IH
: ×16 bit) and DQ
PENLK
WE#
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
or V
(1, 2)
Appendix
PENH
Address
Refer to
Table 3
7
-DQ
See
X
X
X
X
X
for V
0
in byte mode (BYTE#=V
PEN
V
.
PEN
X
X
X
X
X
X
X
Appendix
Refer to
Table 3
High Z
High Z
High Z
DQ
D
D
See
OUT
IN
(4)
0
IL
, CE
STS
High Z
: ×8 bit).
X
X
X
X
X
X
1
Rev. 0.06
(10)
and CE
9
2
.