lh28f640sp Sharp Microelectronics of the Americas, lh28f640sp Datasheet - Page 30

• Manufacturer Part Number: lh28f640sp
• Description: Flash Memory 64mbit 4mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

1.2.7 Block Erase, (Page Buffer) Program and Block Lock Configuration Performance
NOTES:
1. Typical values measured at V
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (the first edge of CE
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
6. These values are valid when the page buffer is full, and the start address is aligned on a 16-word/ 32-byte boundary.
7. Program time per byte (t
are not set. Subject to change based on device characterization.
the device or the rising edge of WE#) until SR.7 going "1" or STS going High Z.
than t
Program time per word (t
ERES
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV3
EHQV3
WHQV4
EHQV4
WHQV5
EHQV5
WHQV6
EHQV6
WHRH1
EHRH1
WHRH2
EHRH2
ERES
Symbol
and its sequence is repeated, the block erase operation may not be finished.
/
/
/
/
/
/
Page Buffer Program Time
(Time to Program 16 words/ 32 bytes)
Program Time
Block Program Time
(Using Page Buffer Program Command)
Block Erase Time
Set Block Lock Bit Time
Clear Block Lock Bits Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
WHQV1
WHQV2
CC
/ t
=3.0V, V
/ t
EHQV1
EHQV2
Parameter
) is 12.5µs/byte (typical).
V
PEN
) is 25.0µs/word (typical).
CC
=3.0V and T
=2.7V-3.6V, T
LHF64PZ8
A
=+25°C. Assumes corresponding lock bits
A
=-40°C to +85°C
Notes
2, 6,
7
2
2
2
2
2
4
4
5
Min.
600
V
PEN
0
, CE
Typ.
400
210
1.6
0.5
=V
64
25
26
1
1
(1)
PENH
or CE
1200
Max.
630
4.8
0.7
85
90
40
2
5
that disables
Unit
µs
µs
µs
µs
µs
µs
s
s
s
(3)
Rev. 0.06
27