hm62w16255hci Renesas Electronics Corporation., hm62w16255hci Datasheet - Page 9

• Manufacturer Part Number: hm62w16255hci
• Description: Wide Temperature Range Version 4m High Speed Sram 256-kword 16-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip select to end of write
Write pulse width
Byte select to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Write disable to output in low-Z
Output disable to output in high-Z
Write enable to output in high-Z
Notes: 1. Transition is measured ±200 mV from steady voltage with output load (B). This parameter is
2. If the CS or LB or UB low transition occurs simultaneously with the WE low transition or after the
3. WE and/or CS must be high during address transition time.
4. If CS , OE , LB and UB are low during this period, I/O pins are in the output state. Then the data
5. t
6. t
7. A write occurs during the overlap of low CS , low WE and low LB or low UB .
8. t
9. t
10.
sampled and not 100% tested.
WE transition, output remains a high impedance state.
input signals of opposite phase to the outputs must not be applied to them.
AS
WR
CW
LBW
is measured from the latest address transition to the latest of CS , WE , LB or UB going low.
is measured from the earliest of CS , WE , LB or UB going high to the first address transition.
is measured from the later of CS going low to the end of write.
is measured from the later of LB going low to the end of write.
t
UBW
is measured from the later of UB going low to the end of write.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
WP
LBW
AS
WR
DW
DH
OW
OHZ
WHZ
, t
UBW
HM62W16255HCI
-12
Min
12
8
8
8
8
0
0
6
0
3
—
—
HM62W16255HCI Series
Max
—
—
—
—
—
—
—
—
—
—
6
6
Rev.1, Nov. 2001, page 9 of 17
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
8
7
9, 10
5
6
1
1
1