r2j25953 Renesas Electronics Corporation., r2j25953 Datasheet - Page 12

• Manufacturer Part Number: r2j25953
• Description: H-bridge Control High Speed Power Switching With Built-in Driver Ic And Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

R2J25953
Recommended Wiring Pattern
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
GND
Notes 1. VB1 and VB2 will diverge soon because of the voltage sensing terminal and it wires for VBS1 and VBS2.
VB
2. GND side wiring of C1 must diverge from the LGND side.
3. Insertion examination of use conditions about the reverse battery protection device and Dz.
4. The reverse battery protection please choose the parts such as MOSFET or Schottky diode by use.
2.5
1.5
0.5
3
2
1
0
-40 -20 0 20 40 60 80 100 120140 160
Dz
PWM = 20 kHz, INA = High, INB = Low,
Rise Time vs. Ta
Cp
Ta (°C)
I
o
= 5 A
TOP VIEW
LOAD
C1
2.5
1.5
0.5
3
2
1
0
-40 -20 0 20 40 60 80 100 120140 160
PWM = 20 kHz, INA = High, INB = Low,
Fall Time vs. Ta
Ta (°C)
I
o
Page 12 of 16
Preliminary
= 5 A