km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet

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km416s8030bn

Manufacturer Part Number
km416s8030bn
Description
128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
shrink-TSOP
Preliminary
CMOS SDRAM
KM416S8030BN
128Mb SDRAM
Shrink TSOP
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Aug. 1999

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km416s8030bn Summary of contents

Page 1

... KM416S8030BN 128Mb SDRAM Samsung Electronics reserves the right to change products or specification without notice. shrink-TSOP Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Preliminary CMOS SDRAM Rev. 0.1 Aug. 1999 ...

Page 2

... KM416S8030BN Revision History Version 0.0 (July 2, 1999, Preliminary) • Preliminary specification for shrink-TSOP. Version 0.1 (August 24, 1999, Preliminary) • Added Note 5 in OPERATING AC PARAMETER. • SAMSUNG recommends tRDL=2CLK and tDAL=2CLK+20ns. shrink-TSOP For -8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported. Preliminary CMOS SDRAM Rev. 0.1 Aug. 1999 ...

Page 3

... Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications. ORDERING INFORMATION KM416S8030BN-G/FH 100MHz(CL=2) KM416S8030BN-G/FL Data Input Register ...

Page 4

... KM416S8030BN PIN CONFIGURATION (Top view DQ0 DDQ 4 DQ1 DQ2 SSQ DQ3 7 8 DQ4 9 V DDQ DQ5 10 DQ6 SSQ 13 DQ7 LDQM CAS 17 RAS BA0 20 BA1 21 22 A10/ PIN FUNCTION DESCRIPTION ...

Page 5

... KM416S8030BN ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

Page 6

... CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. KM416S8030BN-G** 4. KM416S8030BN-F** 5. Unless otherwise noted, input swing IeveI is CMOS(V shrink-TSOP = Test Condition Burst length = (min ...

Page 7

... KM416S8030BN AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...

Page 8

... KM416S8030BN AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid t output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...

Page 9

... KM416S8030BN SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self fefresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...

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