km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet - Page 6
km416s8030bn
Manufacturer Part Number
km416s8030bn
Description
128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KM416S8030BN.pdf
(9 pages)
KM416S8030BN
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in power-
down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM416S8030BN-G**
4. KM416S8030BN-F**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK
NS
PS CKE & CLK
NS
P
N
P
N
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
shrink-TSOP
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 0 to 70 C)
= 10ns
= 10ns
IH
V
V
V
V
/V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
=
=
DDQ
CC
CC
/V
CC
CC
= 10ns
= 10ns
SSQ)
=
=
G
F
-H
Version
140
145
210
800
1.5
20
30
20
1
1
7
5
5
Rev. 0.1 Aug. 1999
CMOS SDRAM
-L
Preliminary
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4