km416c1204c Samsung Semiconductor, Inc., km416c1204c Datasheet
km416c1204c
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km416c1204c Summary of contents
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... L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - KM416C1004C/C-L (5V, 4K Ref.) - KM416C1204C/C-L (5V, 1K Ref.) - KM416V1004C/C-L (3.3V, 4K Ref.) - KM416V1204C/C-L (3.3V, 1K Ref.) • Active Power Dissipation 3.3V Speed ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C • KM416C/V10(2)04CJ DQ0 2 DQ1 3 4 DQ2 5 DQ3 DQ4 8 DQ5 DQ6 9 10 DQ7 N N RAS 14 *A11(N. *A10(N. *A10 and A11 are N.C for KM416C/V1204C(5V/3.3V, 1K Ref. product 400mil 42 SOJ ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C DC AND OPERATING CHARACTERISTICS Symbol Power Speed I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t care CC6 I L Don t care CC7 I L Don t care CCS Operating Current (RAS and UCAS, LCAS, Address cycling @t ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address W delay time CAS precharge to W delay time ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V 3. Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C are referenced to the earlier CAS falling edge. 11. ASC CAH t is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle. 12 referenced to the later CAS falling edge at word read-modify-write cycle. ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t CSH t t RCD ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RWC t RAS t t RCD ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS RAD t t ASR RAH ROW ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR t RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR RCS DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS t RCD LCAS t RAD RAH t t ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RASP ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD RSH ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 RASS t CSR CP t CSR CMOS DRAM ...
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... KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 0.050 (1.27) 50(44) TSOP(II) 400mil 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) 0.047 (1.20) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) ...