km416c1204c Samsung Semiconductor, Inc., km416c1204c Datasheet - Page 6

• Manufacturer Part Number: km416c1204c
• Description: 1m X 16bit Cmos Dynamic Ram With Extended Data Out
• Manufacturer: Samsung Semiconductor, Inc.

KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
AC CHARACTERISTICS
Data set-up time
Data hold time
Refresh period (1K, Normal)
Refresh period (4K, Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper Page mode cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper Page cycle)
RAS pulse width (Hyper Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Parameter
(Continued)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DS
DH
REF
REF
REF
WCS
CWD
RWD
AWD
CPWD
CSR
CHR
RPC
CPA
HPC
HPRWC
CP
RASP
RHCP
OEA
OED
OEZ
OEH
DOH
REZ
WEZ
WED
OCH
CHO
OEP
WPE
RASS
RPS
CHS
Min
100
-50
28
59
37
39
10
18
39
45
27
10
10
15
79
0
7
0
5
5
7
3
4
3
3
5
5
5
5
-45
200K
Max
128
16
64
25
13
13
13
13
Min
100
-50
32
67
42
47
10
20
47
50
30
13
13
15
90
0
8
0
5
5
8
3
5
3
3
5
5
5
5
-5
200K
Max
128
16
64
28
13
13
13
13
Min
100
110
-50
10
36
79
49
54
10
25
56
10
60
35
15
15
15
0
0
5
5
3
5
3
3
5
5
5
5
-6
200K
Max
CMOS DRAM
128
16
64
35
15
15
15
15
Units
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
20,21,22
20,21,22
20,21,22
Notes
9,17
9,17
7,13
6,19
15
16
18
18
12
7
7
7
7
3
3
6
6