71m6545h-igtr/f Maxim Integrated Products, Inc., 71m6545h-igtr/f Datasheet - Page 114
71m6545h-igtr/f
Manufacturer Part Number
71m6545h-igtr/f
Description
Metrology Processors
Manufacturer
Maxim Integrated Products, Inc.
Datasheet
1.71M6545H-IGTRF.pdf
(134 pages)
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Data Sheet 71M6545/H
6.2
6.3
Unless otherwise specified, all parameters listed under
Specifications
114
Parameter
V3P3SYS and V3P3A Supply Voltage for precision
metering operation (MSN mode). Voltage at
VBAT_RTC need not be present.
VBAT_RTC Voltage. VBAT_RTC is not needed to
support the RTC and non-volatile memory unless
V3P3SYS<2.0 V
Operating Temperature
Notes:
CVDD
Name
CSYS
XTAL
CXS
CXL
C1
C2
1. GNDA and GNDD must be connected together.
2. V3P3SYS and V3P3A must be connected together.
Recommended External Components
Recommended Operating Conditions
V3P3SYS
V3P3A
V3P3D
are valid over the Recommended Operating Conditions provided in
XOUT
From
VDD
XIN
XIN
Table 79: Recommended External Components
© 2008–2011 Teridian Semiconductor Corporation
Table 80: Recommended Operating Conditions
GNDA
GNDD
GNDD
GNDD
GNDA
GNDA
XOUT
To
Function
Bypass capacitor for 3.3 V supply
Bypass capacitor for 3.3 V output
Bypass capacitor for V3P3SYS
Bypass capacitor for VDD
32.768 kHz crystal – electrically
equivalent to ECS .327-12.5-17X or
Vishay XT26T, load capacitance 12.5 pF
Load capacitor values for crystal depend
on crystal specifications and board
parasitics. Nominal values are based on
4 pF board capacitance and include an
allowance for chip capacitance.
Condition
VBAT_RTC =0 V to
3.8 V
V3P3SYS<2.0 V
6.4 Performance Specifications
Min
3.0
2.0
-40
Table 80
≥0.1 ±20%
≥1.0 ±30%
Typ
0.1 ±20%
0.1 ±20%
15 ±10%
10 ±10%
32.768
Value
and
PDS_6545_009
6.5 Timing
below.
Max
+85
3.6
3.8
Unit
kHz
Unit
µF
µF
µF
µF
pF
pF
ºC
V
V
v1.0
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