2sa1252 Sanyo Semiconductor Corporation, 2sa1252 Datasheet

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2sa1252

Manufacturer Part Number
2sa1252
Description
Pnp / Npn Epitaxial Planar Silicon Transistors
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN1048D
2SA1252 / 2SC3134
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking: 2SA1252:D
* : The 2SA1252 / 2SC3134 are classified by 1mA h FE as follws:
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
High V EBO .
Wide ASO and high durability against breakdown.
Rank
2SC3134: H
h FE
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90 to 180
( ) : 2SA1252
4
135 to 270
72606 / 31006CA MS IM 8-4698 / 70502TN (KT) / 71598HA (KT) / 3187AT / 3155MW, TS
V (BR)CBO
V (BR)CEO
V (BR)EBO
5
V CE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
Tj
f T
SANYO Semiconductors
2SA1252 / 2SC3134
200 to 400
V CB =(--)40V, I E =0A
V EB =(--)10V, I C =0A
V CE =(--)6V, I C =(--)1mA
V CE =(--)6V, I C =(--)1mA
V CB =(--)6V, f=1MHz
I C =(--)50mA, I B =(--)5mA
I C =(--)10 A, I E =0A
I C =(--)1mA, R BE =
I E =(--)10 A, I C =0A
6
PNP / NPN Epitaxial Planar Silicon Transistors
High V EBO, AF Amp Applications
Conditions
300 to 600
Conditions
7
DATA SHEET
min
(- -)60
(- -)50
(- -)15
90*
Ratings
(3.5)2.2
typ
Ratings
100
--55 to +150
max
(- -)150
(- -)300
(--)0.1
(--)0.1
(--)0.5
(--)60
(--)50
(--)15
600*
200
150
No.1048-1/4
Unit
mW
Unit
MHz
mA
mA
pF
V
V
V
V
V
V
V
C
C
A
A

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2sa1252 Summary of contents

Page 1

... Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Marking: 2SA1252:D 2SC3134 The 2SA1252 / 2SC3134 are classified by 1mA follws: Rank 180 Any and all SANYO Semiconductor products described or contained herein do not have specifications ...

Page 2

... --300 0.2 0.4 Collector-to-Emitter Voltage Collector-to-Emitter Voltage 2SA1252 / 2SC3134 0.6 0.8 1.0 ITR03076 20 2SA1252 ITR03078 2SC3134 From top 500 A 450 A 400 A 350 A 300 0.2 0.4 0.6 Collector-to-Emitter Voltage ...

Page 3

... Collector Current Cob -- 1 1.0 10 Collector-to-Base Voltage 2SA1252 / 2SC3134 100 2SA1252 --6V Pulse 1.2 1.6 0 ITR03080 1000 2SA1252 --6V 7 Pulse 100 100 0 ...

Page 4

... Collector Current 240 2SA1252 / 2SC3134 200 160 120 Ambient Temperature Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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