Note : Marking : E
Applications
Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SA1256 is classified by 1mA h
Ordering number:ENN1056C
C
C
E
C
C
J
S
C
E
D
G
R
B
N
V
u
o
o
m
o
o
o t
o
m
C
e
a
o
l o
a
n
· Ideally suited for use in FM RF amplifiers, mixers,
· High f
· Small NF (2.5dB typ).
s
e l l
e l l
e l l
e l l
e l l
v
s i
n i
a t
t i
a r
t t i
t c
C
e
e
e t
e
oscillators, converters, and IF amplifiers.
B -
c
c
t c
t c
t c
r e
s r
t -
g
o i
g
r u
h
o t
o t
- r
- o
F
e
e
r o
r o
r o
a
n
e
FE
e r
C
g i
o t
- r
- r
n
G
C
T
T
T
u
o t
o t
C
i D
C
t n
d
u
B -
e
o
a
rank : 3, 4, 5
e
a r
o t
w
e r
r u
m
u
e l l
n i
B -
E -
s s
m
a
G
o t
d i
n
f f
T
p
s
e r
p
a
m
f s
t c
p i
a
h t
e
f f
e
C
e
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
s
(230MHz typ), and small Cre (1.1pF typ).
t n
n i
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
r e
r o
a r
t t i
t a
e
a r
r u
V
C
P
r e
o i
u t
l o
r u
V
u t
e r
C
i T
o r
P
P
n
l o
a t
e r
a
e r
e r
m
V
t n
d
a
a
p
a t
l o
g
u
a r
a r
t n
e
a
e
t c
g
a t
i c
m
m
C
e
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
g
a t
o
t e
t e
e
n
c
r e
r e
s
e
a t
t n
SANYO Electric Co.,Ltd. Semiconductor Company
R
h E
a
F
n
k
FE
as follows :
6
0
73102TN (KT)/71598HA (KT)/40196TS (KOTO) 8-4689/3187AT/D064MW/8182KI, TS No.1056-1/5
o t
E
3
1
2
0
r b
S
S
V
V
V
b
I
I
y
T
y
C
E
h E
C
C
C
E
P C
N
P
m
I C
m
j T
f T
s
F
B
, '
B
B
E
B
e r
G
F
g t
b
b
O
O
C
O
O
O
9
l o
l o
0
c
o t
E
4
1
V B
V B
V E
V E
V B
V E
V E
V E
8
C
E
C
C
C
C
C
C
0
High Frequency Amp Applications
=
=
=
=
=
=
=
=
– (
– (
– (
– (
6 –
6 –
6 –
6 –
1
1 )
4 )
6 )
6 )
3
, V
V
V
V
5
0
V
V
V
I ,
I ,
I ,
E
V
o t
I ,
= f
I ,
I ,
C
C
C
5
I ,
1
C 0
C
C
=
=
=
1
M
E 0
1 –
1 –
1 –
=
=
=
8
Package Dimensions
unit:mm
2018B
=
0
– (
– (
H
m
m
m
z
1 )
1 )
, A
, A
, A
m
m
C
= f
= f
= f
A
A
o
C
3
1
1
n
o
1
0
0
d
n
9 .
0
0
t i
d
M
M
o i
M
t i
n
H
H
o i
H
s
z
z
z
n
PNP Epitaxial Planar Silicon Transistors
s
1
0.4
0.95 0.95
1.9
2.9
3
[2SA1256]
2
m
n i
1
0.16
6
5
* 0
0
R
2SA1256
t a
R
y t
0 to 0.1
n i
2
t a
p
1
2
–
3
1
2
g
1 .
5 .
n i
5
0
1
2
s
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
5
g
s
o t
m
+
2
0 –
0 –
a
–
–
–
1
1
1
7
1
x
3
2
–
3
5
2
2
2
* 0
1 .
1 .
7 .
0
0
5
0
0
5
5
0
M
U
U
m
µ
µ
d
d
˚C
˚C
p
p
W
V
V
V
n
n
H
A
A
B
B
F
s
A
t i
t i
z