2sa1376a Renesas Electronics Corporation., 2sa1376a Datasheet
2sa1376a
Manufacturer Part Number
2sa1376a
Description
Pnp Silicon Epitaxial Transistor For High Voltage Amplifiers
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SA1376A.pdf
(6 pages)
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Company:
Part Number:
2sa1376a-L
Manufacturer:
NEC
Quantity:
1 736
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
FEATURES
• High voltage
• Excellent h
• High total power dissipation in small dimension:
• Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** Pulse test PW ≤ 350 µ s, duty cycle ≤ 2% per pulsed
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Turn-off time
V
(2SA1376/2SA1376A)
P
CEO
T
: 0.75 W
: −180 V / −200 V
Parameter
Parameter
FE
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
linearity
V
V
Symbol
Symbol
I
PNP SILICON EPITAXIAL TRANSISTOR
h
h
C(pulse)
V
CE(sat)
BE(sat)
V
V
V
I
I
C(DC)
T
I
FE1
FE2
C
BE
P
CBO
EBO
t
t
CBO
CEO
EBO
T
f
on
off
stg
T
ob
T
j
**
FOR HIGH VOLTAGE AMPLIFIERS
**
**
2SA1376/2SA1376A
*
**
**
V
V
V
V
V
I
I
V
V
I
V
C
C
C
CB
EB
CE
CE
CE
CB
CE
CC
= −50 mA, I
= −50 mA, I
= −10 mA, I
= −200 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −30 V, I
= −10 V, I
−55 to +150
= –10 V
−180/−200
Ratings
−200
−100
−200
0.75
150
−5
DATA SHEET
C
C
C
C
E
E
B
B
B1
= 0
E
Conditions
= −10 mA
= −100 mA
= −10 mA
= −5 mA
= −5 mA
= 0, f = 1.0 MHz
= 10 mA
= −I
= 0
B2
= −1 mA,
Unit
mA
mA
°C
°C
W
V
V
V
2SA1376, 1376A
PACKAGE DRAWING (UNIT: mm)
SILICON TRANSISTORS
−600
MIN.
135
81
80
2SA1376/2SA1376A
300/200
TYP.
−650
−0.2
−0.8
0.16
120
3.5
1.5
600/400
MAX.
−100
−100
−700
−0.3
−1.2
4.0
©
MHz
Unit
mV
nA
nA
pF
µ s
µ s
V
V
−
−
1998
2002
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2sa1376a Summary of contents
Page 1
... − 1.0 MHz − −10 mA −I = −1 mA – SILICON TRANSISTORS 2SA1376/2SA1376A MIN. TYP. MAX. Unit −100 nA −100 nA − 135 300/200 600/400 − 81 −600 −650 −700 mV −0.2 −0.3 V −0.8 −1 ...
Page 2
... CLASSIFICATION FE Marking 135 to 270 200 to 400 FE1 (The U rank is not available for the 2SA1376A 300 to 600 Data Sheet D16194EJ1V0DS 2SA1376, 1376A ...
Page 3
TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) Data Sheet D16194EJ1V0DS 2SA1376, 1376A 3 ...
Page 4
Data Sheet D16194EJ1V0DS 2SA1376, 1376A ...
Page 5
Data Sheet D16194EJ1V0DS 2SA1376, 1376A 5 ...
Page 6
The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...