2sa1968ls Sanyo Semiconductor Corporation, 2sa1968ls Datasheet

2sa1968ls

Manufacturer Part Number

2sa1968ls

Description

Pnp Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SA1968LS.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SA1968LS

Manufacturer:

MICROCHIP

Quantity:

20 000

Current page: 1 of 3
Download datasheet (31Kb)

Ordering number : ENN5183B

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

•

High breakdown voltage(V CEO min=- -900V).

Small Cob(Cob typ=2.2pF).

High reliability(Adoption of HVP process).

Package of full isolation type.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

I CP

P C

I C

V CB =- -900V, I E =0

V EB =- -5V, I C =0

High-Voltage Switching Applications

2SA1968LS

N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439

Conditions

Package Dimensions

unit : mm

2079D

Conditions

PNP Triple Diffused Planar Silicon Transistor

2.55

1 2 3

10.0

High-Voltage Amplifier,

0.9

0.75

1.2

2.55

3.2

[2SA1968LS]

min

4.5

2SA1968LS

0.7

Ratings

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220FI(LS)

1.2

2.8

typ

Ratings

Continued on next page.

--55 to +150

max

--900

150

--10

--30

--7

--1

No.5183-1/3

Unit

Related parts for 2sa1968ls

2sa1968ls Summary of contents

Page 1

... Symbol Conditions V CBO V CEO V EBO Tstg Symbol Conditions I CBO -900V EBO -5V N1501 91098 HA (KT) / 92095 YK (KOTO) TA-0439 2SA1968LS High-Voltage Amplifier, [2SA1968LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0 Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220FI(LS) Ratings --900 --900 ...

Page 2

... Collector Current 2SA1968LS Symbol Conditions =--5V =--1mA =--10V =--1mA Cob V CB =--100V, f=1MHz V CE (sat =--500 =--100 (sat =--500 =--100 A V (BR)CBO I C =--100 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Novermber, 2001. Specifications and information herein are subject to change without notice. 2SA1968LS --10V 3 2 ...

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