2sa1190dtz-e Renesas Electronics Corporation., 2sa1190dtz-e Datasheet

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Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base ...

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Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature 2 Symbol 2SC2855 2SC2856 V 90 120 CBO ...

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Electrical Characteristics (Ta = 25°C) 2SC2855 Item Symbol Min Collector to base V 90 (BR)CBO breakdown voltage Collector to emitter V 90 (BR)CEO breakdown voltage Emitter to base V 5 (BR)EBO breakdown voltage Collector cutoff current I — CBO Emitter ...

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Maximum Collector Dissipation Curve 600 400 200 50 100 0 Ambient Temperature Typical Output Characteristics Collector to Emitter Voltage V 4 Typical Output Characteristics 20 16 ...

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Collector Cut-Off Current vs. Collector to Base Voltage 1,000 100 10 1.0 0 Collector to Base Voltage V CB Emitter Cut-Off Current vs.Emitter to Base Voltage 1,000 100 10 1.0 0 ...

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DC Current Transfer Ratio vs. Collector Current 1,000 –25 300 100 30 V Pulse Collector Current I C Base to Emitter Saturation Voltage vs. Collector Current 10 Pulse I ...

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Collector Output Capacitance vs. Collector to Base Voltage 100 MHz Collector to Base Voltage V (V) CB Noise Voltage Referred to Input vs. Signal Source ...

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Noise Voltage Referred to Input vs. Frequency 100 100 k Frequency ...

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Max 0.5 0.1 1.27 2.54 3.8 0.3 0.5 Hitachi Code TO-92 (1) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g Unit: mm ...

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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...