2sa1649 Renesas Electronics Corporation., 2sa1649 Datasheet
2sa1649
Manufacturer Part Number
2sa1649
Description
Pnp Silicon Epitaxial Power Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SA1649.pdf
(5 pages)
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Part Number:
2SA1649
Manufacturer:
NEC
Quantity:
20 000
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2sa1649(0)-Z-E1-AZ
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20 000
<R>
Document No. D15588EJ3V0DS00 (3rd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
DESCRIPTION
switching and features a very low collector-to-emitter saturation
voltage.
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
• Mold package that does not require an insulating board or
• Low collector saturation voltage:
• Fast switching speed:
• High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Notes 1. PW ≤ 300 ms, Duty Cycle ≤ 10%
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
hybrid IC.
insulation bushing
V
t
f
The 2SA1649 is a mold power transistor developed for high-speed
This transistor is ideal for use in switching regulators, DC/DC
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
CE(sat)
= 0.3
2. Printing board mounted
3. 7.5 cm
Parameter
= −0.3 V MAX. (I
μ
s MAX. (I
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2
× 0.7 mm ceramic board mounted
C
= −3 A)
C
= −3 A)
P
P
T
T
I
PNP SILICON EPITAXIAL TRANSISTOR
C(pulse)
(Tc = 25 °C)
(Ta = 25 °C) 1.0
Symbol
V
V
V
I
I
C(DC)
B(DC)
T
CBO
CEO
EBO
T
stg
j
Note 1
FOR HIGH-SPEED SWITCHING
The mark <R> shows major revised points.
−55 to +150
Note 2
Ratings
DATA SHEET
−7.0
−3.5
−40
−30
−10
−20
150
15
, 2.0
Note 3
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
2SA1649,1649-Z
<R>
Note The depth of notch at the top of the fin is
PACKAGE DRAWINGS (Unit: mm)
1.1 ±0.2
2.3 ±0.3
from 0 to 0.2 mm.
TO-251 (MP-3)
TO-252 (MP-3Z)
1
6.5 ±0.2
5.0 ±0.2
2.3
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2
2.3
4
3
4
2.3 ±0.3
Note
0.5 ±0.1
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
2.3 ±0.2
2.3 ±0.2
0.5 ±0.1
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
2002
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2sa1649 Summary of contents
Page 1
... PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. ...
Page 2
... B2 CC Refer to the test circuit. K 200 to 400 = 17 Ω Base current I waveform TUT CC I Collector current B2 waveform ≅ Data Sheet D15588EJ3V0DS 2SA1649,1649-Z TYP. MAX. Unit −30 V −40 V μ −10 A −1.0 mA μ −10 A −1.0 mA μ −10 A − 100 − ...
Page 3
... TYPICAL CHARACTERISTICS ( 25°C) Data Sheet D15588EJ3V0DS 2SA1649,1649-Z 3 ...
Page 4
... Data Sheet D15588EJ3V0DS 2SA1649,1649-Z ...
Page 5
... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA1649,1649-Z Not all M8E 02. 11-1 ...