2sc5195-t1 Renesas Electronics Corporation., 2sc5195-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5195-t1
• Description: Microwave Low Noise Amplifier Npn Silicon Epitaxial Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain
Insertion Power Gain (1)
Noise Figure (2)
Noise Figure (1)
Gain Bandwidth Product (2)
Gain Bandwidth Product (1)
Collector Capacitance
FE
Notes 1. Pulse Measurement: PW
Classification
Marking
Rank
h
PARAMETER
FE
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
80 to 160
FB
88
SYMBOL
|S
|S
I
I
h
NF
NF
C
CBO
EBO
21e
21e
f
f
FE
T
T
re
|
|
2
2
V
V
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
A
350 s, Duty cycle
= 1 V, I
= 1 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 5 V, I
= 1 V, I
= 25 C)
C
C
C
C
C
C
C
C
E
E
= 0
= 0
= 3 mA
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 7 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 0, f = 1.0 MHz
CONDITION
Note 1
2 %, Pulsed
Note 2
MIN.
4.5
80
3
TYP.
1.7
1.5
9.5
0.7
4
8
5
MAX.
100
100
160
2.5
0.8
2SC5195
UNIT
GHz
GHz
nA
nA
dB
dB
dB
dB
pF