2sc5141 Renesas Electronics Corporation., 2sc5141 Datasheet - Page 2
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2sc5141
Manufacturer Part Number
2sc5141
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5141.pdf
(8 pages)
2SC5141
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
(BR)CBO
Min
20
—
—
—
50
—
4.0
9.5
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
—
120
0.8
5.8
13.0
1.6
CBO
CEO
EBO
C
Max
—
1
1
10
250
1.4
—
—
3.0
Unit
V
mA
pF
GHz
dB
dB
Ratings
20
12
2
50
80
150
–55 to +150
A
A
Test conditions
I
V
V
V
V
V
f = 1 MHz
V
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A, I
= 15 V, I
= 12 V, R
= 2 V, I
= 4 V, I
= 5 V, I
= 4 V, I
= 4 V, I
= 4 V, I
C
C
E
C
C
C
Unit
V
V
V
mA
mW
E
E
C
C
= 0,
= 0
= 20 mA
= 20 mA
= 20 mA,
= 5 mA,
BE
= 0
= 0
=