2sc5507-t2 Renesas Electronics Corporation., 2sc5507-t2 Datasheet - Page 3

• Manufacturer Part Number: 2sc5507-t2
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
Thermal/DC Characteristics
Capacitance/f
Remark The graphs indicate nominal characteristics.
250
200
150
100
Ambient Temperature T
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
0.30
0.25
0.20
0.15
0.10
0.05
50
25
20
15
10
0
5
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0
T
25
Collector to Emitter Voltage V
Characteristics
P
P
P
Collector to Base Voltage V
tot
1
tot
tot
1.0
(15 mm × 15 mm, t = 0.6 mm)
-T
-T
-T
C
A
A
: When case temperature
: Free air
: Mounted on ceramic board
50
is specified
2
2.0
A
(˚C), Case Temperature T
75
3
3.0
100
160 µ
140 µ
120 µ
100 µ
I
B
80 µ
60 µ
40 µ
=
A
20 µ
= +25°C, unless otherwise specified)
CB
CE
4
A
A
A
A
A
A
A
125
f = 1 MHz
4.0
(V)
(V)
A
Data Sheet PU10522EJ01V0DS
150
5
5.0
C
(˚C)
200
100
15
10
10
5
1
0.001
30
25
20
15
10
0
5
0
V
1
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
0.2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
0.01
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Base to Emitter Voltage V
Collector Current I
Collector Current I
0.4
0.1
0.6
10
1
C
0.8
(mA)
C
(mA)
BE
V
10
1.0
CE
(V)
V
f = 2 GHz
2SC5507
= 2 V
CE
= 3 V
100
1.2
100
3