2sc5508 Renesas Electronics Corporation., 2sc5508 Datasheet

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2sc5508

Manufacturer Part Number
2sc5508
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10521EJ01V0DS (1st edition)
(Previous No. P13865EJ1V0DS00)
Date Published September 2004 CP(K)
Printed in Japan
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., G
• Maximum available power gain: MAG = 19 dB TYP. @ V
• f
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2SC5508
2SC5508-T2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Free air
T
= 25 GHz technology adopted
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 50 pcs.
Parameter
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
a
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
= 16 dB TYP. @ V
50 pcs (Non reel)
3 kpcs/reel
Quantity
NPN SILICON RF TRANSISTOR
Symbol
P
V
V
V
T
tot
The mark
CBO
CEO
EBO
I
T
C
stg
Note
j
A
CE
= +25°C)
= 2 V, I
DATA SHEET
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
shows major revised points.
–65 to +150
C
Ratings
= 5 mA, f = 2 GHz
115
150
3.3
1.5
15
35
CE
= 2 V, I
NPN SILICON RF TRANSISTOR
C
= 20 mA, f = 2 GHz
Unit
mW
Supplying Form
mA
°C
°C
V
V
V
©
NEC Compound Semiconductor Devices, Ltd. 1999, 2004
2SC5508

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2sc5508 Summary of contents

Page 1

... Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape = +25°C) A Symbol Ratings Unit V 15 CBO V 3.3 CEO V 1.5 EBO Note P 115 mW tot T 150 ° –65 to +150 °C stg The mark shows major revised points. 2SC5508 © NEC Compound Semiconductor Devices, Ltd. 1999, 2004 ...

Page 2

... Note GHz Note GHz µ s, Duty Cycle ≤ output Data Sheet PU10521EJ01V0DS 2SC5508 MIN. TYP. MAX. Unit – – 200 nA – – 200 100 – – GHz ...

Page 3

... 0.001 (V) CE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 5.0 Data Sheet PU10521EJ01V0DS 2SC5508 = 2 V 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage V ( CURRENT GAIN vs. COLLECTOR CURRENT 0.01 0 100 Collector Current I (mA 100 ...

Page 4

... C OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 125 GHz 100 out –5 0 –20 – Data Sheet PU10521EJ01V0DS 2SC5508 MAG 21e 10 100 Collector Current I (mA) C 125 P out 100 –10 – Input Power P ...

Page 5

... NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Data Sheet PU10521EJ01V0DS 2SC5508 1.5 GHz 100 Collector Current I (mA 2.5 GHz ...

Page 6

... EQUAL NF CIRCLE GHz Unstable area NF = 1.0 dB min Γ GHz Unstable area opt Data Sheet PU10521EJ01V0DS 2SC5508 NF = 1.1 dB min Γ opt ...

Page 7

... NF G min a (GHz) (dB) (dB) 0.8 1.59 24.5 0.9 1.61 23.7 1.0 1.63 23.0 1.5 1.72 19.9 1.8 1.78 18.3 1.9 1.79 17.9 2.0 1.81 17.5 2.5 1.90 15.8 Γopt Rn/50 MAG. ANG. 0.26 31.7 0.17 0.26 32.7 0.17 0.26 34.7 0.17 0.23 57.0 0.16 0.20 78.0 0.14 0.19 86.0 0.14 0.19 94.2 0.13 0.20 138.3 0.10 Γopt Rn/50 MAG. ANG. 0.12 28.1 0.15 0.12 28.8 0.15 0.12 31.7 0.15 0.09 71.1 0.14 0.08 106.2 0.13 0.08 118.5 0.13 0.08 130.5 0.12 0.14 –179.7 0.11 Γopt Rn/50 MAG. ANG. 0.07 –159.4 0.13 0.07 –157.5 0.13 0.08 –155.7 0.13 0.13 –149.2 0.13 0.16 –146.1 0.13 0.17 –145.0 0.13 0.19 –143.9 0.13 0.25 –136.7 0.13 Γopt Rn/50 MAG. ANG. 0.26 –158.1 0.12 0.26 –155.5 0.13 0.27 –153.1 0.13 0.30 –142.6 0.14 0.33 –137.3 0.15 0.34 –135.7 0.06 0.35 –134.1 0.16 0.40 –126.5 0.18 Data Sheet PU10521EJ01V0DS 2SC5508 7 ...

Page 8

... PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) 8 2.05±0.1 1.25±0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base Data Sheet PU10521EJ01V0DS 2SC5508 ...

Page 9

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10521EJ01V0DS 2SC5508 Not all The M8E 00 0110 9 ...

Page 10

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 2SC5508 0406 ...

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