2sc5594xp-tl-e Renesas Electronics Corporation., 2sc5594xp-tl-e Datasheet - Page 3

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2sc5594xp-tl-e

Manufacturer Part Number
2sc5594xp-tl-e
Description
Transistors Silicon Npn Epitaxial High Frequency Low Noise Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5594XP-TL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
2SC5594
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 7
200
150
100
0.4
1.0
0.8
0.6
0.2
20
16
12
50
8
4
0
0
0
1
0.1
Maximum Collector Dissipation Curve
Collector to Base Voltage
Collector Output Capacitance vs.
f = 1.8GHz
Power Gain vs. Collector Current
Ambient Temperature
0.2
Collector to Base Voltage
Collector Current
2
50
0.5
5
100
10
1
20
2
V
I
C
150
I
f = 1MHz
CE
E
Ta (°C)
V
(mA)
= 0
= 3 V
CB
50
5
2 V
1 V
(V)
200
100
10
200
100
50
40
30
20
10
0
0
5
4
0
3
1
2
1
1
1
Noise Figure vs. Collector Current
DC Current Transfer Ratio vs.
Gain Bandwidth Product vs.
Collector Current
Collector Current
Collector Current
2
2
2
Collector Current
Collector Current
5
5
5
10
10
10
V
20
20
f = 1.8GHz
20
CE
I
I
I
C
C
C
V
V
= 1 to 3 V
CE
CE
(mA)
(mA)
(mA)
50
50
50
= 3 V
= 3 V
2 V
1 V
2 V
1 V
100
100
100

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