2sc5754-t2 Renesas Electronics Corporation., 2sc5754-t2 Datasheet - Page 10

• Manufacturer Part Number: 2sc5754-t2
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD
S-PARAMETERS
10
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Remark The graphs indicate nominal characteristics.
30
25
20
15
10
30
25
20
15
10
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave]
URL http://www.csd-nec.com/
5
0
–10
5
0
–10
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
V
I
V
I
Cq
Cq
CE
CE
G
G
= 4 mA, 1/2 Duty
= 4 mA, 1/2 Duty
= 3.2 V, f = 1.8 GHz
= 3.6 V, f = 1.8 GHz
P
P
–5
–5
Input Power P
Input Power P
0
0
5
5
[Device Parameters]
P
P
out
out
in
in
(dBm)
(dBm)
C
C
10
10
15
15
I
I
C
C
Data Sheet PU10008EJ02V0DS
20
20
300
250
200
150
100
50
0
300
250
200
150
100
50
0
30
25
20
15
10
30
25
20
15
10
5
0
–10
5
0
–10
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
V
I
V
I
Cq
Cq
CE
CE
G
G
= 20 mA, 1/2 Duty
= 20 mA, 1/2 Duty
= 3.2 V, f = 1.8 GHz
= 3.6 V, f = 1.8 GHz
P
P
–5
–5
Input Power P
Input Power P
0
0
5
5
P
P
out
out
in
in
(dBm)
(dBm)
C
C
10
10
15
15
2SC5754
I
I
C
C
20
20
300
250
200
150
100
50
0
300
250
200
150
100
50
0