2sc5750 Renesas Electronics Corporation., 2sc5750 Datasheet

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2sc5750

Manufacturer Part Number
2sc5750
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc5750-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. P15656EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
FEATURES
• Ideal for medium output power amplification
• P
• HFT3 technology (f
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
2SC5750
2SC5750-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, consult your NEC sales representative.
Note Mounted on 1.08 cm
O (1 dB)
Part Number
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
= 15.0 dBm TYP. @ V
Unit sample quantity is 50 pcs.
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
T
= 12 GHz) adopted
50 pcs (Non reel)
3 kpcs/reel
2
NPN SILICON RF TRANSISTOR FOR
Quantity
1.0 mm (t) glass epoxy PCB
CE
= 2.8 V, f = 1.8 GHz, P
Symbol
P
V
V
V
T
tot
I
T
CBO
CEO
EBO
stg
C
Note
j
4-PIN SUPER MINIMOLD
A
= +25 C)
DATA SHEET
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
65 to +150
Ratings
200
150
9.0
6.0
2.0
50
in
= 1 dBm
NPN SILICON RF TRANSISTOR
Unit
mW
mA
V
V
V
Supplying Form
C
C
2SC5750
©
2001

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2sc5750 Summary of contents

Page 1

... Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape = + Symbol Ratings Unit V 9.0 CBO V 6.0 CEO V 2.0 EBO Note P 200 mW tot T 150 +150 stg 2SC5750 Supplying Form © 2001 ...

Page 2

... 1.8 GHz dBm 2 mA 1.8 GHz dBm 2 mA 1.8 GHz dBm in 350 s, Duty Cycle 2% Data Sheet P15656EJ1V0DS 2SC5750 MIN. TYP. MAX. Unit 100 nA 100 nA 75 120 150 15.0 GHz 10.0 13.0 dB 1.7 2.5 dB 0.26 0.5 pF 15.0 dB 14.5 dB 15.0 dBm ...

Page 3

... COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 0.9 1 (V) Collector to Emitter Voltage 100 Data Sheet P15656EJ1V0DS 2SC5750 MHz Collector to Base Voltage V ( step B 400 A 300 A 200 A 100 ...

Page 4

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 20 MSG 100 1 (mA) 100 (mA) Data Sheet P15656EJ1V0DS 2SC5750 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 1 10 Frequency f (GHz MAG ...

Page 5

... EFFICIENCY vs. INPUT POWER 250 25 200 150 15 100 10 P out –15 –10 Input Power P 250 200 150 100 Data Sheet P15656EJ1V0DS 2SC5750 250 1.8 GHz 200 150 100 – (dBm ...

Page 6

... NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C Remark The graphs indicate nominal characteristics 100 Data Sheet P15656EJ1V0DS 2SC5750 ...

Page 7

... Data Sheet P15656EJ1V0DS 2SC5750 – (K – Note S K MAG/MSG 22 ANG. (dB) (deg.) 4.9 0.037 23.02 10.2 0.068 20.19 15.2 0.087 18.50 20.3 0.128 17.24 25.2 0.163 16.30 29.9 0.200 15 ...

Page 8

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 8.0 0.050 27.85 16.2 0.119 24.91 23.5 0.147 23.19 30.4 0.203 21.95 36.3 0.252 21.03 41.6 0.308 20.27 46.1 0.354 19.61 50.5 0.418 19.11 54.2 0.461 18.63 57.9 0.518 18.24 61.3 0.557 17.89 64.7 0.618 17 ...

Page 9

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 10.6 0.075 29.91 20.8 0.153 26.83 29.5 0.197 25.18 37.0 0.266 23.90 43.0 0.335 22.97 48.2 0.405 22.19 52.4 0.469 21.50 56.3 0.540 20.94 59.6 0.598 20.44 63.1 0.659 19.98 66.2 0.708 19.57 69.5 0.773 19 ...

Page 10

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 13.5 0.159 31.62 26.0 0.205 28.58 35.5 0.271 26.77 43.2 0.355 25.51 48.8 0.436 24.53 53.7 0.521 23.69 57.2 0.593 22.97 60.7 0.678 22.32 63.7 0.735 21.76 66.9 0.801 21.23 69.8 0.851 20.74 73.2 0.908 20 ...

Page 11

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 15.3 0.155 32.56 28.6 0.228 29.28 38.4 0.314 27.50 46.0 0.403 26.20 51.3 0.493 25.20 55.8 0.587 24.33 59.1 0.659 23.55 62.5 0.745 22.89 65.4 0.802 22.27 68.6 0.868 21.71 71.3 0.912 21.17 74.7 0.963 20 ...

Page 12

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 20.6 0.240 34.40 36.1 0.340 31.21 45.8 0.455 29.34 52.5 0.576 27.91 56.6 0.680 26.77 60.1 0.779 25.74 62.6 0.849 24.83 65.6 0.924 24.01 68.0 0.966 23.28 71.2 1.019 21.76 73.8 1.043 20.66 77.4 1.077 19 ...

Page 13

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 23.6 0.245 35.08 39.6 0.420 32.02 48.4 0.548 30.05 54.3 0.676 28.51 57.4 0.784 27.25 60.4 0.882 26.20 62.3 0.937 25.17 65.1 1.009 23.73 67.3 1.042 22.26 70.5 1.080 21.03 73.2 1.101 20.14 76.8 1.126 19 ...

Page 14

... Data Sheet P15656EJ1V0DS 2SC5750 S K MAG/MSG 22 ANG. (dB) (deg.) 25.6 0.331 35.89 41.3 0.474 32.21 49.2 0.626 30.26 54.0 0.762 28.66 56.4 0.868 27.39 58.9 0.967 26.27 60.5 1.012 24.51 63.0 1.072 22.62 65.2 1.099 21.52 68.3 1.132 20.43 71.1 1.149 19.60 74.8 1.167 18 ...

Page 15

... PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.2 1.25±0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet P15656EJ1V0DS 2SC5750 15 ...

Page 16

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SC5750 The M8E 00. 4 ...

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